Electronic Engineering

Biographical Details:

Prof. Patrick J. McNally, BE, ScM, PhD, FIEI, FInstP, CEng, CPhys, SMIEEE. Co-Director, Nanomaterials Processing Laboratory, School of Electronic Engineering. Professor (Personal Chair) of Electronic Engineering. Fellow of Institute of Physics & Institution of Engineers of Ireland. Leader and participant in numerous EU and Irish research projects. Member, Editorial Board for J. Mater. Sci.: Materials in Electronics and App. Phys. Research. Authored/co-authored >200 scientific papers.

Research Interests:

Main research interests include materials and electronic device process characterisation/metrology and novel materials for Si-based photonics. X-ray diffraction imaging (XRDI) especially 3D-XRDI and 3D Surface Modelling for strain and defect mapping. Photoacoustics hardware and software design.

Selected Peer Reviewed Journals

• ¿Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques¿, C S Wong, N S Bennett, B Galiana, P Tejedor, M Benedicto, J M Molina-Aldareguia and P J McNally, Semicond. Sci. Technol. 27 115012 (2012) ¿Laser machined macro and micro structures on glass for enhanced light trapping in solar cells¿, D. Moore, M. Rahman, D. Dowling, P. McNally and D. Brabazon Appl. Phys. A, DOI 10.1007/s00339-012-7147-4 (2012). ¿Study of exciton-polariton modes in nanocrystalline thin films of CuCl using reflectance spectroscopy¿, B. Foy, E. McGlynn, A. Cowley, P.J. McNally and M.O. Henry, J. Appl. Phys.,112, 033505, 2012. ¿Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper¿ K.V. Rajani, S. Daniels, E. McGlynn, R. P Gandhiraman, R. Groarke and P. J McNally, Materials Letters 71, pp. 160¿16, 2012. ¿Influence of mechanical defects on the crystal lattice of silicon¿, T. Jauß, A.N. Danilewsky, J. Wittge, A. Crö. 2012. .
• Patrick J McNally RESEARCH PUBLICATIONS 1987-2011. 2011. .
• A. Cowley. 2010. Electroluminescence of γ-CuBr thin films via vacuum evaporation depositon. Journal Of Physics D-applied Physics, 43, , pp165101-165105.
• A. Danilewsky. 2010. Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography. Nuclear Instruments And Methods In Physics Research Section B, 268, , pp399-402.
• A. Lankinen. 2010. X-ray excited optical luminescence of Mg-doped GaN. Journal Of X-ray Science And Technology, 16, 3, pp215-220.
• D. Allen. 2010. Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography. Nuclear Instruments And Methods In Physics Research Section B, 268, , pp383-387.
• F. Olabanji Lucas. 2010. Structural, optical and electrical properties of co-evaporated CuCl/KCl films. Physica Status Solidi C: Current Topics In Solid State Physics, 6, S1, ppS114-S118.
• J. Wittge. 2010. X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers. Powder Diffraction, 25, 2, pp99-103.
• K. V. Rajani. 2010. Ultrathin chromium transparent metal contacts by pulsed dc magnetron sputtering. Physica Status Solidi A-applied Research, 207, 7, pp1586-1589.
• A. Cowley. 2009. UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques. Physica Status Solidi A-applied Research, 206, 5, pp923-926.
• A. Lankinen. 2009. Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge. Journal Of Crystal Growth, 311, 22, pp4619-4627.
• A. N. Danilewsky. 2009. Dislocations and dislocation reduction in space grown GaSb. Crystal Research And Technology, 44, 10, pp1109-1114.
• D. Danieluk. 2009. Optical properties of undoped and oxygen doped CuCl films on silicon substrates. Journal Of Materials Science-materials In Electronics, 20, , ppS76-S80.
• F.O. Lucas. 2009. Electrical properties of -CuCl thin films. Journal Of Materials Science-materials In Electronics, 20, , ppS144-S148.
• J. Wittge. 2009. X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers. Advances In X-ray Analysis, 53,
• M M Alam. 2009. Hybrid organic¿inorganic spin-on-glass CuCl films for optoelectronic applications. Journal Of Physics D-applied Physics, 42, , pp225307-225311.
• Prof. Patrick J McNally. 2009. ¿UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques¿, A. Cowley, B. Foy, D. Danilieuk, P. J. McNally, A. L. Bradley, E. McGlynn, and A. N. Danilewsky, phys. stat. sol (a), 206 (5), pp. 923¿926 (2009) / DOI 10.1002/pssa.200881282. ¿Structural, optical and electrical properties of co-evaporated CuCl/KCl films¿, F. Olabanji Lucas, P. J. McNally, A. Cowley, S. Daniels, L. Bradley, D. Danieluk and D. M. Taylor, phys. stat. sol. (c), 6 (S1), pp. S114¿S118 (2009) / DOI 10.1002/pssc.200881310. ¿Optical properties of undoped and oxygen doped CuCl films on silicon substrates¿, D. Danieluk, A.L. Bradley, A. Mitra, L. O¿Reilly, O.F. Lucas, A. Cowley, P.J. McNally, B. Foy and E. McGlynn, J. Mater. Sci. Mater. Electron., 20, pp. S76-S80 (2009). DOI 10.1007/s10854-007-9448-5. Electrical properties of -CuCl thin films¿, F.O. Lucas, P.J. McNally, S. Daniels amd D.M. Taylor, J. Mater, Sci: Mat.
• A. N. Danilewsky. 2008. White beam topography of 300 mm Si wafers. Journal Of Materials Science-materials In Electronics, 19, , ppS269-S272.
• Anirban Mitra. 2008. Optical properties of CuCl films on silicon substrates. Physica Status Solidi B-basic Research, 245, 12, pp2808-2814.
• Francis Olabanji Lucas. 2008. Morphological, optical and electrical properties of g-CuCl deposited by vacuum evaporation. Journal Of Materials Science-materials In Electronics, 19, , pp99-101.
• J. Grabowska. 2008. Growth and Characterisation of Epitaxially Ordered Zinc Aluminate Domains on c-Sapphire. Thin Solid Films, 516, 8, pp1725-1735.
• K. Horan. 2008. Structural and electrical characterisation of ion-implanted strained silicon. Materials Science And Engineering B-solid State Materia, 154-155, , pp118-121.
• L. O'Reilly. 2008. Raman Scattering Studies of Ultrashallow Sb Implants in Strained Si. Journal Of Materials Science-materials In Electronics, 19, , pp305-309.
• L. O¿Reilly. 2008. Constraints on micro-Raman strain metrology for highly doped strained Si materials. Applied Physics Letters, 92, , pp233506-.
• N. S. Bennett. 2008. Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?. Journal Of Vacuum Science & Technology B, 26, , pp391-395.
• Prof. Patrick J McNally. 2008. Guest Editor. 19, 2, pp97-209.
• A. Lankinen, T. Lang, S. Suihkonen, O.Svensk, A.Säynätjoki, T.O. Tuomi, P.J. McNally, M. Odnoblyudov, V.Bougrov, A.N. Danilewsky, P.Bergman and R. Simon,. 2007. Dislocations at the interface between sapphire and GaN. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9307-4,
• A. Mitra, F. O. Lucas, L. O¿Reilly, P. J. McNally, S. Daniels and Gomathi Natarajan. 2007. Towards the fabrication of a UV light source based on CuCl thin films. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9178-8
• A. Säynätjoki, A. Lankinen, T.O. Tuomi, P.J. McNally, A.Danilewsky, Y. Zhilyaev and L.Fedorov, J. Mater. Sci: Mater. Electron. 2007. Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9303-8,
• F.O. Lucas, A. Mitra, P.J. McNally, S. Daniels, A.L. Bradley, D.M. Taylor, Y.Y. Proskuryakov, K. Durose and D.C. Cameron,. 2007. Evaluation of the chemical, electronic and optoelectronic properties of ã-CuCl thin films and their fabrication on Si substrates. Journal Of Physics D-applied Physics, 40, doi:10.1088/0022-3727/40/11/030, pp3461-3467.
• Gomathi Natarajan R. T. Rajendra Kumar, S. Daniels, D. C. Cameron and P. J. McNally. 2007. Electrical studies on sputtered CuCl thin films. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9310-9
• I. Brazil, P.J. McNally, N. Ren, L. O¿Reilly, A. Danilewsky, T.O. Tuomi, A. Lankinen, A. Säynätjaki, R. Simon, S. Soloviev, L.B. Rowland, P.M. Sandvik,. 2007. An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers. Materials Science Forum, 556-557, , pp227-230.
• J. Hassan, J.P. Bergman, A. Henry, H.Pedersen, P.J. McNally and E. Janzén. 2007. 4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate. Material Science Forum, 556-557, , pp53-56.
• J.Grabowska, K.K. Nanda, R.T. Rajendra-Kumar, J. P. Mosnier, M.O. Henry, S. B. Newcomb, P. McNally, L. O¿Reilly, X. Lu and E. McGlynn. 2007. Self-organized ZnAl2O4 nanostructures grown on c-sapphire. Superlattices And Microstructures, 42, pp327-332.
• L. O¿Reilly, A. Mitra, F. O. Lucas, Gomathi Natarajan, P. J. McNally, S. Daniels, A. Lankinen, D. Lowney, A. L. Bradley and D. C. Cameron. 2007. Characterisation of n-type g-CuCl on Si for UV optoelectronic applications. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9173-0
• L. Xu , D. Lowney, P.J. McNally, A. Borowiec, T.O. Tuomi, A.N. Danilewsky and A. Lankinen. 2007. Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain. Semiconductor Science And Technology, 22, DOI:10.1088/0268-1242/22/8/024 , pp970-979.
• O. Reentilä, A. Lankinen, M. Mattila, A. Säynätjoki, T. O. Tuomi, H. Lipsanen, L. O¿Reilly and P. J. McNally,. 2007. In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs,. Journal Of Materials Science-materials In Electronics, DOI 10.1007/s10854-007-9306-5,
• W. Chen, P. McCloskey, J.F. Rohan, P. Byrne, and Patrick J. McNally. 2007. Preparation and Temperature Cycling Reliability of Electroless Ni(P) Under Bump Metallization. Ieee Transactions On Components And Packaging Technologies, 30, 1, pp144-151.
• A. Lankinen, L. Knuuttila, T. Tuomi, P. Kostama, A. Säynätjoki, J. Riikonen, H. Lipsanen, P.J. McNally, X. Lu, H. Sipila, S. Vaijarvi and D. Lumb,. Nucl. Inst. Meth. Phys. Res A, , pp. 62-65 ().. 2006. Synchrotron x-ray topography study of defects in epitaxial GaAs on high quality Ge. Nuclear Instruments And Methods In Physics Research Section A, 563, , pp62-65.
• A. Lankinen, T. Tuomi, M. Karilahti, Z. R. Zytkiewicz, J. Z. Domagala, P. J. McNally, Y-T. Sun, F. Olsson, and S. Lourdudoss. 2006. Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si. Crystal Growth & Design (print), 6, 5 DOI: 10.1021/cg0503301, pp1096-1100.
• D. Noonan, P.J. McNally, W.-M. Chen, A. Lankinen, L. Knuuttila, T.O. Tuomi, A.N. Danilewsky and R. Simon. 2006. The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron x-ray topography. Microelectronics Journal, 37, 11, pp1372-1378.
• Gomathi Natarajan, R. T. Rajendra Kumar, S. Daniels, D. C. Cameron and P. J. McNally. 2006. Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties. Journal Of Applied Physics, 100, , pp096108-.
• Gomathi Natarajan, S. Daniels, D. C. Cameron, L. O¿Reilly, A. Mitra, P. J. McNally, O. F. Lucas, R. T. Rajendra Kumar, Ian Reid and A. L. Bradley. 2006. Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications. Journal Of Applied Physics, 100, , pp033520-.
• L. O'Reilly, G. Natarajan, O.F. Lucas, P.J. McNally, S. Daniels, A. Mitra, L. Bradley, D. Cameron and A. Reader. 2006. Ultra-violet electroluminescence using wide-bandgap CuCl on silicon. Journal Of Crystal Growth, 287, , pp139-144.
• N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O¿Reilly, P. J. McNally, G. Cooke and H. Kheyrandish. 2006. Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89, , pp182122-.
• O.F. Lucas, L. O'Reilly, G. Natarajan, P.J. McNally, S. Daniels, A. Mitra, L. Bradley, D. Cameron and A. Reader. 2006. Encapsulation of heteroepitaxially grown wide bandgap ¿×-CuCl on silicon substrates. Journal Of Crystal Growth, 287, , pp112-117.
• A. Lankinena, T. Tuomi, J. Riikonen, L. Knuuttila, H. Lipsanen, M. Sopanen, A. Danilewsky, P.J. McNally, L. O¿Reilly, Y. Zhilyaev, L. Fedorov, H. Sipilä, S. Vaijärvi, R. Simon, D. Lumb and A. Owens. 2005. Synchrotron X-ray topographic study of dislocations and stacking faults in InAs. Journal Of Crystal Growth, 283, 3-4, pp320-327.
• B.J. Ryan, D.P. Lowney, M.O. Henry, P.J. McNally, E. McGlynn, K. Jacobs, L. Considine,. 2005. Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy. Thin Solid Films, 472, , pp308-314.
• G.D.M. Dilliway, A.J. Smith, J.J. Hamilton, J. Benson, Lu Xu, P.J. McNally, G. Cooke, H. Kheyrandish and N.E.B. Cowern. 2005. Transient enhanced diffusion and deactivation of ion-implanted As in strained Si. Nuclear Instruments And Methods In Physics Research Section B, 237, , pp131-135.
• J. Riikonen, T. Tuomi, A. Lankinen, J. Sormunen, A. Säynätjoki, L. Knuuttila, H. Lipsanen, P. J. McNally, L. O¿Reilly, A. Danilewsky, H. Sipilä, S. Vaijärvi, D. Lumb and A. Owens. 2005. Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy. Journal Of Materials Science-materials In Electronics, 16, 7, pp449-453.
• L. Knuuttila, A. Lankinen, J. Likonen, H. Lipsanen, X. Lu, P. McNally, J. Riijonen and T. Tuomi. 2005. Low Temperature Growth GaAs on Ge. Japanese Journal Of Applied Physics Part 1, 44, 11, pp7777-7784.
• L. O'Reilly, G. Natarajan, P.J. McNally, D. Cameron, O.F. Lucas, M. Martinez-Rosas, L. Bradley and A. Reader. 2005. Growth and characterisation of wide-bandgap I-VII optoelectronic materials on silicon. Journal Of Materials Science-materials In Electronics, 16, 7, pp415-419.
• L. O¡¦Reilly, O. F. Lucas, P. J. McNally, A. Reader, Gomathi Natarajan, S. Daniels, D. C. Cameron, A. Mitra, M. Martinez-Rosas, A. L. Bradley. 2005. Room-temperature ultraviolet luminescence from ¿×-CuCl grown on near lattice-matched silicon. Journal Of Applied Physics, 98, , pp113512-.
• Lu Xu, P.J. McNally, G.D.M.Dilliway, N.E.B. Cowern, ChrisJeynes, Ernest Mendoza, Peter Ashburn and Darren M. Bagnall. 2005. Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001). Journal Of Materials Science-materials In Electronics, 16, 7, pp469-474.
• G. Murphy, P. F. Whelan, P. J. McNally, T. Tuomi and R. Simon. 2004. The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography. The European Physical Journal - Applied Physics, 27, 1-3, pp443-446.
• N.V. Sochinskii, V.N. Babentsov, P.J. McNally, A. Dundee and C. Corsi. 2004. Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures. Infrared Physics & Technology, 46, , pp181-184.
• P. J. McNally, J. Kanatharana, B. H. W. Toh, D. W. McNeill, A. N. Danilewsky, T. Tuomi, L. Knuuttila, J. Riikonen, J. Toivonen and R. Simon. 2004. Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal Of Applied Physics, 96, 12, pp7596-7602.
• P.J. McNally, J. Kanatharana, B.H.W. Toh, D.W. McNeill, T. Tuomi, A.N. Danilewsky, L. Knuuttila, J. Riikonen and J. Toivonen. 2004. Comparison of induced stresses due to electroless vs sputtered copper metallization for integrated circuit (IC) interconnect. Semiconductor Science And Technology, 19, , pp1280-1284.
• M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert. 1996. Effects of Au overlayers on the electrical and morphological characteristics of Pd/Sn ohmic contacts to n-GaAs. Thin Solid Films, 290-291, , pp417-421.
• M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F.Herbert. 1996. Comparison of Pd/Sn and Pd/Sn/Au thin-film systems for device metallization. Materials Research Society Symposium Proceedings, 427, , pp583-589.
• P.J. McNally, P.A.F. Herbert, T. Tuomi, M. Karilahti and J.A. Higgins. 1996. Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes. Journal Of Applied Physics, 79, 11, pp8294-8297.
• P.J. McNally, T. Tuomi, P.A.F. Herbert, A. Baric, P Äyräs. 1996. Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs P-HEMTs. Ieee Transactions On Electron Devices, ED-43, 7, pp1085-1091.
• P.J. McNally, J.K. McCaffrey and A. Baric. 1995. Piezoelectrically active defects and their impact on the performance of GaAs MESFETs. Journal Of Materials Processing Technology, 55, 3-4, pp303-310.
• A. Baric, P.J. McNally and J.K McCaffrey. 1994. Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs MESFETs. Materials Science And Engineering B-solid State Materia, , pp248-252.
• P.J. McNally, J.J. Rosenberg, T.N. Jackson and J.C. Ramirez. 1993. Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs. Solid-state Electronics, 36, 11, pp1597-1612.
• P.J. McNally. 1992. The use of generalised models to explain the behaviour of Ohmic contacts to n-type GaAs. Solid-state Electronics, 35, 12, pp1705-1708.
• J.C. Ramirez, P.J. McNally, L.S. Cooper, J.J. Rosenberg, L.B. Freund and T.N. Jackson. 1988. Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs. Ieee Transactions On Electron Devices, 35, 12, pp1232-1240.
• P.J. McNally, L.S. Cooper, J.J. Rosenberg and T.N. Jackson. 1988. Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field effect transistors through the use of externally applied loads. Applied Physics Letters, 52, 21, pp1800-1802.

Selected Chapters

• Prof. Patrick J McNally. 2012. Raman Spectroscopy and its Application in the Characterization of Semiconductor Devices. , pp497-509.

• "Strain Characterization of Directly Bonded Germanium-to-Silicon Substrates" , I. Ferain, N. Bennett, P. McNally, S. Holl, and C. Colinge, Pacific Rim Meeting on Electrochemical & Solid-State Science 2012 (PRiME 2012), Honolulu, Hawaii, 7-12 October 2012. ¿A Novel X-Ray Diffraction Technique for Analysis of Die Stress Inside Fully Encapsulated Packaged Chips¿, C.S. Wong WONG, N. Bennett, D. Allen, A. Danilewsky and P. McNally, 4th IEEE Electronics System Integration Technologies Conference (ESTC 2012), Amsterdam, Netherlands, 17-20 Sept., 2012. ¿X-ray Diffraction Imaging for Prediction of the Propagation Probability of Individual Cracks in Brittle Single Crystal Materials¿, B.K. Tanner B.K., A.N. Danilewsky, J. Wittge, J. Garagorri, M.R. Elizalde, D. Allen, P. McNally, M.C. Fossati and D. and Jacques, 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012), St. Petersburg, Russia, 15-20 September 2012. ¿Analysis of the Defect Structure of F, , Multiple conferences, - ,