Electronic Engineering

Biographical Details:

Suresh Uppal received the M.Sc.(Hons.) degrees from Panjab University, Chandigarh, India in 1997, M.Tech. degree from the Indian Institute of Technology Delhi (IITD), Delhi, India, in 1999, and the Ph.D. degree from the University of Southampton, Southampton, U.K., in 2003. His Ph.D. dissertation is on the diffusion of B and Si in bulk Ge. During 2003-2005, he was with the University of Southampton, U.K., working on dopant diffusion and self-diffusion in Si and SiGe alloys and modeling of a solid-state infrared modulator using high-purity Ge. From 2005-2007 I worked at School of Electrical, Electronic and Computer Engineering and was involved in the design, fabrication, modeling, and characterization of strained Si/SiGe-based devices. From 2007-2009, I was working at Qimonda Dresden, Gmbh on reliability of silicon oxide and hi-k dielectrics for Gate electrode and storage capacitor (MIM) applications. Currently I am at Dublin City University where I am involved in an EU project Smart Power Management for Home and Health and are characterising Si, SOI and SiC materials and devices for high power applications.

Research Interests:

My research interests are dopant diffusion and activation in new channel materials (Si, SiGe, Ge, InGaAs), materials and device engineering for CMOS/BiCMOS and optoelectronics applications, process and device (TCAD) simulation, and reliability of gate dielectrics.

Selected Peer Reviewed Journals

• Dr Suresh Uppal. .
• Zhou, Dayu; Schroeder, U.; Jegert, G.; Kerber, M.; Uppal, S.; Agaiby, R.; Reinicke, M.; Heitmann, J.; Oberbeck, L. 2009. Time dependent dielectric breakdown of amorphous ZrAlx O y high- k dielectric used in dynamic random access memory metal-insulator-metal capacitor. Journal Of Applied Physics, 104, 4, pp044104-.
• Boscke, T.S.; Guerrero, G.; Liebau, M.; Uppal, S.; Yu Pi Lee; Pethe, W.; Patz, M.; Kleye, A.; Su, P.-Y.; Orth, A.; Wen-Chung Liu; Lutzen, J. 2009. Conductive carbon as a novel front-end electrode material for a trench DRAM. In Production, 30, 5, pp442-444.
• Tsang, Y.L.; Chattopadhyay, S.; Uppal, S.; Escobedo-Cousin, E.; Ramakrishnan, H.K.; Olsen, S.H.; O'Neill, A.G. 2007. Modeling of the threshold voltage in strained Si/Si1-xGex/Si1-yGey(x⩾y) CMOS architectures. Ieee Transactions On Electron Devices, 54, 11, pp3040-3048.
• Uppal, S.; Kanoun, M.; Varzgar, J.B.; Chattopadhyay, S.; Olsen, S.; O'Neill, A. 2006. Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices. Materials Science And Engineering B-solid State Materia, 135, 3, pp207-209.
• Varzgar, J.B.; Kanoun, M.; Uppal, S.; Chattopadhyay, S.; Yuk Lun Tsang; Escobedo-Cousins, E.; Olsen, S.H.; O'Neill, A.; Hellstrom, P.-E.; Edholm, J.; Mikael Ostling; Lyutovich, K.; Oehme, M.; Kasper, E. 2006. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures. Materials Science And Engineering B-solid State Materia, 135, 3, pp203-206.
• Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S. 2006. Diffusion and activation of dopants in silicon and advanced silicon-based materials. Physica Scripta, T126, , pp89-96.
• Uppal, S.; Bonar, J.M.; Jing Zhang; Willoughby, A.F.W. 2004. Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C. Applied Physics Letters, 114-115, , pp349-351.
• Uppal, S.; Willoughby, A.F.W.; Bonar, J.M.; Cowern, N.E.B.; Grasby, T.; Morris, R.J.H.; Dowsett, M.G. 2004. Diffusion of boron in germanium at 800-900°C. Journal Of Applied Physics, 96, 3, pp1376-1380.
• Uppal, S.; Willoughby, A.F.W.; Bonar, J.M.; Jing Zhang. 2004. Evidence for a vacancy and interstitial mediated diffusion of as in Si and Si0.9Ge0.1. Applied Physics Letters, 85, 4, pp552-554.
• Uppal, S.; Willoughby, A.F.W.; Bonar, J.M.; Evans, A.G.R.; Cowerern, N.E.B.; Morris, R.; Dowsett, M.G. 2001. Ion-implantation and diffusion behaviour of boron in germanium. Physica B, 308-310, , pp525-528.
• Uppal, S.; Willoughby, A.F.W.; Bonar, J.M.; Evans, A.G.R.; Cowern, N.E.B.; Morris, R.; Dowsett, M.G. 2001. Diffusion of ion-implanted boron in germanium. Journal Of Applied Physics, 90, 8, pp4293-4295.
• Jensen, N.; Rau, U.; Hausner, R.M.; Uppal, S.; Oberbeck, L.; Bergmann, R.B.; Werner, J.H. 2000. Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells. Journal Of Applied Physics, 87, 5, pp2639-2645.

• Uppal, S.; Boescke, T., Reliability of NON dielectric with Carbon and Poly Electrode, Materials Research Society Symposium, 04-APR-10 - 09-APR-10, San Francisco, CA, USA
• Wittmann, R.; Uppal, S.; Hössinger, A.; Cervenka, J.; Selberherr, S., A study of boron implantation into high Ge content SiGe Alloys, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, 29-OCT-06 - 03-NOV-06, Cancun, Mexico, 667 - 676
• Wittmann, R.; Hössinger, A.; Cervenka, J.; Uppal, S.; Selberherr, S., Monte Carlo simulation of Boron implantation into (100) germanium, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 06-SEP-06 - 08-SEP-06, Monterey, USA, 381 - 384
• Uppal, S.; Kanoun, M.; Chattopadhyay, S.; Agaiby, R.; Olsen, S.H.; Bull, S.J.; O'Neill, A., Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices, In: B.J. Pawlak, K.S. Jones, S.B. Felch, M. Hane ed.Doping Engineering for Device Fabrication (Materials Research Society Symposium), 18-APR-06 - 19-APR-06, San Francisco, CA, USA, 65 - 70
• Rutt, H.N. ; Uppal, S. ; Chong Yew Lee, An electrically driven mid-infrared solid state modulator, The Joint 30th International Conference on Infrared and Millimeter Waves, 19-SEP-05 - 23-SEP-05, Williamsburg, VA, USA, 281 - 282
• Uppal S, Rutt H. N., An electrically driven solid state modulator, 2nd EMRSDTC Technical conference, 16-JUN-05 - 17-JUN-05, Edinburgh, UK
• Bonar, J.M.; Karunaratne, Msa; Uppal, S.; Ashburn, P.; Willoughby, A.F.W., Bonar, J.M. (School of Electronics and Computer Science, University of Southampton, Southampton, United Kingdom); Karunaratne, Msa; Uppal, S.; Ashburn, P.; Willoughby, A.F.W., SiGe: Materials, Processing, and Devices -2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02, 03-OCT-04 - 08-OCT-04, Honolulu, HI, USA, 903 - 914
• Uppal, S.; Bollani, M; Willoughby, A.F.W., Bonar, J.M.;Morris, R.J.H.; Dowsett, M.G., Diffusion on ion-implanted boron in high Ge content SiGe Alloys, SiGe: Materials, Processing, and Devices -2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02, 03-OCT-04 - 08-OCT-04, Honolulu, HI, USA, 159 - 164
• Uppal, S.; Willoughby, A.F.W.; Bonar, J.M.; Cowern, N.E.B.; Morris, R.J.H.; Dowsett, M.G., Diffusion of ion-implanted boron and silicon in germanium, High-Mobility Group-IV Materials and Devices (Materials Research Society Symposium Proceedings), 13-APR-04 - 15-APR-04, San Francisco, CA, USA
• Uppal, S.; Bonar, J.M.; Jing Zhang; Willoughby, A.F.W., Arsenic diffusion in Si and Si0.9Ge0.1 alloys: effect of defect injection, High-Mobility Group-IV Materials and Devices (Materials Research Society Symposium Proceedings), 13-APR-04 - 15-APR-04, San Francisco, CA, USA, 261 - 266
• Uppal, S. ; Willoughby, A.F.W. ; Bonar, J.M.; Cowern, N.E.B.; Morris, R.J.H.; Bollani, M., Diffusion of boron in germanium and Si1-xGex (x>50%) alloys, CMOS Front-End Materials and Process Technology. Symposium ( Mater. Res. Soc. Symposium), 22-APR-03 - 23-APR-03, San Francisco, CA, USA, 217 - 222