Electronic Engineering
Dr Nick Bennett
| Name: | Dr Nick Bennett |
|---|---|
| Phone Number | 7625 |
| Room: | S214 |
| E-Mail Address: |
Dr Nick Bennett
Selected Peer Reviewed Journals
- Dr Nick Bennett. .
- N. S. Bennett and N. E. B. Cowern. 2012. Doping Characterization for Germanium-based Microelectronics and Photovoltaics using the Differential Hall Technique. Applied Physics Letters, 100,, pp172106-.
- K. Y. Byun, P. Fleming, N. Bennett, F. Gity, P. McNally, M. Morris, I. Ferain, and C. Colinge. 2011. Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation. Journal Of Applied Physics, 109,, pp123529-1-123529-5.
- C. S. Wong, N. S. Bennett, P. J. McNally, B. Galiana, P. Tejedor, M. Benedicto, J. M. Molina-Aldareguia, S. Monaghan, P. K. Hurley, K. Cherkaoui. 2010. Multi-technique characterisation of MOVPE-grown GaAs on Si. Microelectronic Engineering, 88,, pp472-.
- N. S. Bennett, C. Ahn, N. E. B. Cowern and P. Pichler. 2010. Review of stress effects on dopant solubility in Silicon and Silicon-Germanium layers. Solid State Phenomena, 156,, pp173-.
- C. Ahn, N. Bennett, S. T. Dunham and N. E. B. Cowern. 2009. Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon. Physical Review B-condensed Matter, 79,, pp073201-.
- N. E. B. Cowern, N. S. Bennett, C. Ahn, J. C. Yoon, S. Hamm, W. Lerch, H. Kheyrandish, F. Cristiano, A. Pakfar. 2009. Overlayer stress effects on defect formation in Si and Ge. Thin Solid Films, 518,, pp2442-.
- N. S. Bennett, N. E. B. Cowern, and B. J. Sealy. 2009. Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon. Applied Physics Letters, 94,, pp252109-.
- L. O'Reilly, K. Horan, P. J. McNally, N. S. Bennett, N. E. B. Cowern, A. Lankinen, B. J. Sealy, R. M. Gwilliam, T. C. Q. Noakes, and P. Bailey. 2008. Constraints on micro-Raman strain metrology for highly doped strained Si materials. Applied Physics Letters, 92,, pp233506-.
- N. E. B. Cowern, A. J. Smith, N. Bennett, B. J. Sealy, R. Gwilliam, R. P. Webb, B. Colombeau, S. Paul, W. Lerch, A. Pakfar. 2008. Vacancy engineering: A low thermal budget method for high-concentration diffusionless implantation doping. Material Science Forum, 573,, pp295-.
- N. S. Bennett, A. J. Smith, R. M. Gwilliam, R. P. Webb, B. J. Sealy, N. E. B. Cowern, L. O⿿Reilly, P. J. McNally. 2008. Antimony for nMOS ultrashallow junctions in strained silicon: a superior dopant to arsenic?. Journal Of Vacuum Science & Technology B, 26,, pp391-.
- N. S. Bennett, H. H. Radamson, C. S. Beer, A. J. Smith, R. M. Gwilliam, N. E. B. Cowern, B. J. Sealy. 2008. Enhanced n-type dopant solubility in tensile-strained S. Thin Solid Films, 517,, pp331-.
- N. S. Bennett, N. E. B. Cowern, A. J. Smith, M. Kah, R. M. Gwilliam, B. J. Sealy, T. C. Q. Noakes, P. Bailey, D. Giubertoni, and M. Bersani. 2008. Differential Hall characterisation of ultrashallow doping in advanced Si-based materials. Materials Science And Engineering B-solid State Materia, 154,, pp229-.
- N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O⿿Reilly, P. J. McNally, G. Cooke, H. Kheyrandish. 2006. Highly conductive Sb-doped layers in strained Si. Applied Physics Letters, 89,, pp182122-.
- N. S. Bennett, A. J. Smith, B. Colombeau, R. Gwilliam, N. E. B. Cowern, B. J. Sealy. 2005. Differential Hall profiling of ultra-shallow junctions in Si and SOI. Materials Science And Engineering B-solid State Materia, 124,, pp305-.
