Physics

Research Interests:

RESEARCH (a) Semiconductors: Defects in semiconductors and the characterisation of novel materials and structures constitute the main research area. The importance of defects lies in their pivotal role in the operation of devices, either as the basis of their operation or as major reasons for device failure. Understanding the detailed properties of atom-scale defects is the objective of our work so that we may better exploit the materials or compensate for their negative effects. There are two main strands to this research at this time. Radioactive isotopes are used to provide chemical identification of impurities in bulk semiconductors and to study the evolution of defects as elements transform from one to another. The high quality facilities in our laboratories are also used for the study of thin film semiconductor structures grown using a variety of novel techniques. The topics studied range from impurity and defect analysis in bulk silicon to the study of quantum dots in group IV and III-V materials and the analysis of wide bandgap semiconductors grown using pulsed laser deposition. Much of this work is carried out at very low temperatures where the material properties of the semiconductor are most clearly revealed. Facilities include high performance spectrometers, a high field superconducting magnet and an excellent range of cryogenic equipment. Current projects: (i) The use of radioactive isotopes for the study of impurity centres in semiconductors (international collaboration based in CERN at the ISOLDE facility) from1997-date (ii) Structural and electronic defect/dislocation characterisation in wide bandgap semiconductors (iii) The properties of zinc oxide nanostructures. (b) Physics Education: The focus of the work is the use of modern familiar technology (digital cameras, mobile phones, ipods) e for school laboratories, which seems to provide very positive stimuli to pupils towards science and to improve significantly their understanding of the concepts and the mathematical analysis.

Selected Peer Reviewed Journals

• Prof. Martin O Henry. .
• Prof. Martin O Henry. 2010. .
• Ger Tobin, Enda McGlynn, Martin O. Henry, Jean-Paul Mosnier, Eduardo dePosada and James Lunney,. 2006. Effects of excitonic diffusion on stimulated emission in nanocrystalline ZnO,. Applied Physics Letters, 88, (article # 071919)
• J.-R. Duclère, C. Mc Loughlin, J. Fryar, R. O¿Haire, M. Guilloux-Viry, A. Meaney, A. Perrin, E. McGlynn, M.O. Henry, J.-P. Mosnier,. 2006. High optical quality of ZnO thin films grown on Pt (111) epitaxial electrodes by pulsed laser deposition. Thin Solid Films, 500, , pp78-83.
• Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, Matthew Xia,. 2006. Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques. Physical Review B-condensed Matter, 73, article # 165212
• Prof. Martin O Henry. 2006. Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, Matthew Xia, Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques, Phys. Rev. B, 73 (2006). Physical Review B-condensed Matter, 73,
• R.O¿Haire, A. Meaney, E. McGlynn, M.O. Henry, J.-R. Duclère, J.-P. Mosnier,. 2006. Growth of Crystalline ZnO Nanostructures using Pulsed Laser Deposition. Superlattices And Microstructures, 39, , pp153-161.
• S. Chakrabarti, B. Doggett, R. O'Haire, E. McGlynn, M.O. Henry, A. Meaney, J.-P. Mosnier,. 2006. P-type Conduction above Room Temperature in Nitrogen-doped ZnO Thin Film Grown By Plasma-assisted Pulsed Laser Deposition,. Electronics Letters, 42, , pp1181-1183.
• .J. Ryan, D.P. Lowney, M.O. Henry, P.J. McNally, E. McGlynn, K. Jacobs, L. Considine,. 2005. Evaluation of the Optoelectronic Properties of Epitaxial Lateral Overgrown GaN on Sapphire and the Role of Optically Active Metastable Defects using Cathodoluminescence and Photoluminescence Spectroscopy. Thin Solid Films, 473, , pp308-314.
• A. Meaney, J.-R. Duclere, E. McGlynn, J.-P. Mosnier, R. O'Haire, M. O. Henry, ,. 2005. Comparison of Structural, Optical and Electrical Properties of Undoped ZnO Thin Films Grown on r- and c-Al2O3 Substrates using Pulsed Laser Deposition. Superlattices And Microstructures, 38, , pp256-264.
• J. Grabowska, A. Meaney, K.K. Nanda, J.-P. Mosnier, M.O. Henry, J.-R. Duclère, E.McGlynn,. 2005. Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: limiting effects on device potential. Physical Review B-condensed Matter, 71, article #115439.
• J. Grabowska, K. K. Nanda, E. McGlynn, J.-P. Mosnier, M. O. Henry. 2005. Studying the growth conditions, the alignment and structure of the ZnO nanorods. Surface And Coatings Technology, 200, , pp1093-1096.
• J. Grabowska, K.K. Nanda, E. McGlynn, J.-P. Mosnier, M.O. Henry, A. Beaucamp, A. Meaney,. 2005. Synthesis and photoluminescence of ZnO nanowires / nanorods,. Journal Of Materials Science-materials In Electronics, 16, , pp397-401.
• J.-R. Duclère, M. Novotny, A. Meaney, R. O¿Haire, E. McGlynn, M. O. Henry, J.-P. Mosnier,. 2005. Properties of Li-, P- and N-doped ZnO Thin Films prepared by Pulsed Laser Deposition,. Superlattices And Microstructures, 38, , pp397-405.
• J.-R. Duclère, R. O¿Haire, A. Meaney, K. Johnston, I. Reid, G. Tobin, J.-P. Mosnier, M. Guilloux-Viry, E. McGlynn, M.O. Henry, ,. 2005. Fabrication of P-type doped ZnO thin films using pulsed laser deposition for device applications. Journal Of Materials Science-materials In Electronics, 16, , pp421-427.
• James Fryar, Enda McGlynn, Martin O. Henry, Jean-Paul Mosnier,. 2005. Study of exciton polariton modes in nanocrystalline thin-films of ZnO using reflectance spectroscopy. Nanotechnology, 16, , pp2625-2632.
• V. Krastev, I. Reid, C. Galassi, G. Hughes, E. McGlynn,. 2005. Influence of C4F8 / Ar/ O plasma etching on SiO2 surface chemistry. Journal Of Materials Science-materials In Electronics, 16, , pp541-547.
• D. McCabe, K. Johnston, M.O. Henry, E. McGlynn, E. Alves, J.J. Davies,. 2004. Erratum to: Optical Absorption of a Li-Related Impurity in ZnO. Physica B, 351, , pp227-227.
• E. McGlynn, J. Fryar, G. Tobin, C. Roy, M.O. Henry, J-P. Mosnier, E. dePosada, J.G. Lunney,. 2004. Effect of Polycrystallinity on the Optical Properties of Highly Oriented ZnO Grown by Pulsed Laser Deposition,. Thin Solid Films, 458, , pp330-335.
• J. Fryar, E. McGlynn, M. O. Henry, A. A. Cafolla, C.J. Hanson. 2004. Dominant role of adsorbed fluid layers on the polar surfaces of ZnO in ambient atmospheric conditions,. Nanotechnology, 15, , pp1797-1801.
• K.S. Zhuravlev, V.A. Kolosanov, A.G. Milekhin, V.G. Polovinkin, T.S. Shamirzaev, Yu N. Rakov, Yu B. Myakishev, J. Fryar, E. McGlynn, M.O. Henry,. 2004. Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions. Semiconductor Science And Technology, 19, S94
• B.J. Ryan, M.O. Henry, E. McGlynn and J. Fryar,. 2003. Investigation of optical metastability in GaN using photoluminescence spectroscopy. Physica B, 340-342, , pp452-456.
• C Roy, S Byrne, E McGlynn, J P Mosnier, E de Posada, D O'Mahony, J G Lunney, M O Henry, B Ryan, and A A Cafolla,. 2003. Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films. Thin Solid Films, 436, , pp273-276.
• Deirdre McCabe, karl Johnston, Martin O. Henry, Enda McGlynn, Eduardo Alves and J. John Davies,. 2003. Optical absorption of a Li-related impurity in ZnO. Physica B, 340-342, , pp225-229.
• Enda McGlynn, James Fryar, Martin O. Henry, Jean-Paul Mosnier, James G. Lunney, Donagh O¿Mahony, Eduardo dePosada,. 2003. Exciton-polariton behaviour in bulk and polycrystalline ZnO. Physica B, 340-342, , pp230-234.
• G. Tobin, E. McGlynn, M.O. Henry, J.P. Mosnier, J.G. Lunney, D.O¿Mahony, E. dePosada,. 2003. Ultraviolet stimulated emission from bulk and polycrystalline ZnO thin films with varying grain sizes,. Physica B, 340-342, , pp245-249.
• J. Fryar, E. McGlynn, M.O. Henry, A.A. Cafolla, C.J. Hanson,. 2003. Excitonic properties of the polar faces of bulk ZnO after wet etching. Physica B, 340 - 342, , pp210-215.
• K.W. Mah, J-P Mosnier, E. McGlynn, M.O. Henry, D. O¿Mahony and J.G. Lunney,. 2002. Study of photoluminescence at 3.310 and 3.368eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition. Applied Physics Letters, 80, 5218, pp1-3.
• Lee Carroll and Martin Henry. 2002. Self-compensating interferometer for measuring the changes in refractive index of supercooled water as a function of temperature at 632.8nm. Applied Optics, 41, , pp1330-1336.
• J P Leitao, M C Carmo, M O Henry, E McGlynn,. 2001. Uniaxial stress study of the 1026meV center in Si:Pt. Physical Review B-condensed Matter, 63, , pp235208-.
• K W Mah, E McGlynn, J P Mosnier, M O Henry, J Castro, D O¿Mahony and J G Lunney,. 2001. Photluminescence Study of GaN Grown by Pulsed Laser Deposition in Nitrogen Atmosphere. Materials Science And Engineering B-solid State Materia, 82, , pp128-130.
• M O Henry, E McGlynn, J Fryar, S Lindner, J. Bollmann, ISOLDE Collaboration,. 2001. The Evolution of Point Defects in Semiconductors Studied using the Decay of Implanted Radioactive Isotopes,. Nuclear Instruments And Methods In Physics Research Section B, 178, , pp256-259.
• W Mah, E McGlynn, J Castro, J G Lunney, J P Mosnier, D O¿Mahony and M O Henry,. 2001. Study of Defect Structures in GaN grown by Pulsed Laser Deposition in a Nitrogen Atmosphere,. Journal Of Crystal Growth, 222, , pp497-502.
• K G McGuigan, E McGlynn, F O¿Cairbre, J Love, M O Henry,. 2000. Piezo-spectroscopic induced perturbations for defects in cubic crystals under uniaxial stress applied along arbitrary low-symmetry crystal directions. Journal Of Physics Condensed Matter, 12, , pp7055-7068.
• M O Henry, M Deicher, R. Magerle, E McGlynn, A Stotzler,. 2000. Photoluminescence analysis of semiconductors using radioactive isotopes. Hyperfine Interactions, 129, , pp443-460.
• V.A. Karkov, H. H. Cheng, A.I. Nikiforov, V.A. Cherepanov, O.P. Pchelyakov, K.S. Zhuravlev, A.B. Talochkin, E. McGlynn and M.O. Henry,. 2000. RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots. Thin Solid Films, 369, , pp79-83.
• C.A. Frehill, M.O. Henry, E. McGlynn, E.C. Lightowlers and A. Safanov,. 1999. Cadmium-Lithium defects in silicon. Materials Science And Engineering B-solid State Materia, 58, , pp159-162.
• E. McGlynn, M.O. Henry, P. McLoughlin and E.C. Lightowlers. 1999. Photoluminescence spectroscopy of an AL-C complex in silicon. Physical Review B-condensed Matter, 59, , pp10084-10090.
• J. Bollmann, S. Lindner, M.O. Henry, E. McGlynn, and the ISOLDE Collaboration,. 1999. Deep level anomalies in silicon doped with radioactive gold atoms. Physica B, 273-274, , pp433-436.
• J. P. Leitão, M. C. Carmo, M. O. Henry, E. McGlynn, J. Bolmann and S. Lindner,. 1999. The 777 meV photoluminescence band in Si:Pt. Physica B, 273 -274, , pp420-423.
• M. Gibson, E. McGlynn and M.O. Henry,. 1999. Study of bound exciton excited state structure using photothermal ionisationspectroscopy. Physica B, 273-274, , pp1011-1014.
• E Alves, M F da Silva, J C Soares, M O Henry, R Gwilliam, B J Sealy K Freitag, R Vianden, D Stievenard. 1998. Lattice site location of Thulium and erbium implanted GaAs. Nuclear Instruments And Methods In Physics Research Section B, 138, , pp421-425.
• J Bollmann, S Lindner, E Alves, A Burchard, M Deicher, M Fauciulli, D Forkel-Wirth, M O Henry, M H Knopf, R Magerle, E McGlynn, K G McGuigan, J C. Soares, A Stotzler and G Weyer Proc. 24th Int. Conf. Phys. Semicond. (1998). 1998. Identification of deep states due to Au/Pt/Ir/Os in silicon using radioactive transformations,.
• M O Henry, E Alves, J Bollmann, A Burchard, M Deicher, M Fauciulli, D Forkel-Wirth, M O Henry, M H. Knoph, R. Magerle, E McGlynn, K G McGuigan, J C . Soares, A Stotzler and G Weyer,. 1998. Radioactive Isotope Identification of Au and Pt photoluminescence centres in silicon. Physica Status Solidi B-basic Research, 210, 853
• E Alves, J Bollmann, M Deicher, M C do Carmo, M O Henry, M H A Knopf, J P Leitao, R Magerle and C McDonagh,. 1997. . Material Science Forum, 473, , pp258-262.
• Frehill CA Henry MO McGlynn E Daly SE Deicher M Magerle R McGuigan KG Safanov A Lightowlers EC. 1997. Novel luminescent centres in cadmium doped silicon. Defects In Semiconductors - Icds-19,, pp521-526.
• J P Leitao, M C Carmo and M O Henry,. 1997. Stress Study of 1.5¿Ým emission in Si:Er and GaAs:Er. Journal Of Luminescence, 110, , pp72-74.
• M O Henry, E McGlynn, S E Daly, M Deicher, R Margerle, K G McGuigan, A Safanov and E C Lightowlers,. 1997. Novel Luminescent Centres in Cadmium Doped Silicon, C A Frehill,. Material Science Forum, 521, , pp258-262.
• Leitao JP Carmo MC Henry MO. 1997. Stress study of 1.5 mu m emission in Si:Er and GaAs:Er. Journal Of Luminescence, 72-4,, pp110-111.
• E McGlynn, M O Henry, K G McGuigan and M C do Carmo,. 1996. A photoluminescence study of cadmium related defects in oxygen-rich silicon. Physical Review A, b54, 14503
• K G McGuigan, M O Henry, J D Campion, S E Daly, E McGlynn and M C do Carmo,. 1996. A Photoluminescence Study of a Series of Closely Related Axial Defects of Monoclinic 1 and Rhombic 1 Symmetry in Oxygen Rich Zn Doped Silicon. Semiconductor Science And Technology, 11, 930
• S E Daly, E McGlynn, M O Henry, J D Campion, K G McGuigan, M C do Carmo and M H Nazare,. 1996. The Complexing of Oxygen with Be, Cd and Zn in Silicon. Materials Science And Engineering A, B36, 116
• S E Daly, M O Henry, E Alves, M F da Silva, J C Soares, R G William, B J Sealy, K Freitag, R Vianden and D Stievenard Mat. Res. Soc. Symp. Proc.. 1996. Rutherford Backscattering and Photoluminescence Studies of Erbium implanted GaAs,. 422, 173
• S E Daly, M O Henry, K G McGuigan and M C do Carmo,. 1996. A Complex Luminescent Defect in Be-Doped Oxygen Rich Silicon. Semiconductor Science And Technology, 11, 996
• McGlynn E Henry MO McGuigan KG doCarmo MC. 1996. Photoluminescence study of cadmium-related defects in oxygen- rich silicon. Physical Review B-condensed Matter, 54,, pp14494-14503.
• Daly SE Henry MO McGuigan KG doCarmo MC. 1996. A complex luminescent defect in Be-doped oxygen-rich silicon. Semiconductor Science And Technology, 11,, pp996-1001.
• McGuigan KG Henry MO Campion JD Daly SE McGlynn E DoCarmo MC. 1996. A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich zinc-doped silicon. Semiconductor Science And Technology, 11,, pp930-934.
• Daly SE McGlynn E Henry MO Campion JD McGuigan KG doCarmo MC Nazare MH. 1996. The complexing of oxygen with the Group II impurities Be Cd and Zn in silicon. Materials Science And Engineering B-solid State Materia, 36,, pp116-119.
• Daly SE Henry MO Frehill CA Freitag K Vianden R Rohrlack G Forkel D. 1995. The chemical identification of defect impurities using radioactive isotopes. Icds-18 - Proceedings Of The 18th International Confere,, pp1497-1502.
• Daly SE McGlynn E Henry MO Campion JD McGuigan KG DoCarmo MC Nazare MH. 1995. Oxygen complexing with group II impurities in silicon. Icds-18 - Proceedings Of The 18th International Confere,, pp1303-1307.
• S E Daly, E McGlynn, M O Henry, J D Campion, M C do Carmo and M H Nazare,. 1995. Oxygen Complexing with Group II Impurities in Silicon. Material Science Forum, 196-201, 1497
• S E Daly, M O Henry, C A Frehill, K Freitag, R Vianden and D Forkel. 1995. The Chemical Identification of Defect Impurities Using Radioactive Isotopes. Material Science Forum, 196-201, 1497
• DALY SE CAMPION JD MCGLYNN E HENRY MO DOCARMO MC NAZARE MH. 1995. OXYGEN COMPLEXING WITH GROUP-II IMPURITIES IN SILICON. Solid State Communications, 93,, pp454-454.
• A L McCarren, H J Ruskin, K G McGuigan and M O Henry,. 1994. Prezo-spectroscopic data analysis: a PC Tool. Iee Proceedings-science Measurement And Technology, 141, 185
• M O Henry, J D Campion, K G McGuigan, E C Lightowlers, M C do Carmo and M H Nazare,. 1994. A Photoluminescence study of Zn-0 complexes in Silicon. Semiconductor Science And Technology, 9,
• S E Daly, M O Henry, K Freitag and R Vianden,. 1994. Radioactive Isotopes for Photoluminescence Spectroscopy - 111 In in Silicon. Journal Of Physics Condensed Matter, 6, L643
• S White, E McGlynn, M O Henry, J D Lambkin and L Considine. 1994. Imaging Semiconductor Wafers using Photoluminescence. Optical Engineering, 33, 3974
• WHITE SF HENRY MO MCGLYNN E LAMBKIN JD CONSIDINE L. 1994. IMAGING SEMICONDUCTOR WAFERS USING PHOTOLUMINESCENCE. Optical Engineering, 33,, pp3974-3977.
• DALY SE HENRY MO FREITAG K VIANDEN R. 1994. RADIOACTIVE ISOTOPES FOR PHOTOLUMINESCENCE SPECTROSCOPY - IN- 111 IN SILICON. Journal Of Physics-condensed Matter, 6,, ppL643-L650.
• HENRY MO CAMPION JD MCGUIGAN KG LIGHTOWLERS EC DOCARMO MC NAZARE MH. 1994. A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON. Semiconductor Science And Technology, 9,, pp1375-1381.
• MCCARREN AL RUSKIN HJ MCGUIGAN KG HENRY MO. 1994. PIEZO-SPECTROSCOPIC DATA-ANALYSIS - A PC TOOL. Iee Proceedings-science Measurement And Technology, 141,, pp185-189.
• J D Campion, M O Henry, M H Nazare and E C Lightowlers. 1993. A New Deep Photoluminescence Band in Beryllium-doped Silicon. Material Science Forum, 117-118, 177
• M O Henry, T B Kehoe, M H Nazare, K Freitag and R Vianden. 1993. The Correlation of Nuclear and Photoluminescence Characterisation of In-Implanted Silicon. Applied Surface Science, 63, 232
• HENRY MO KEHOE TB NAZARE MH FREITAG K VIANDEN R. 1993. CORRELATION OF PHOTOLUMINESCENCE AND NUCLEAR CHARACTERIZATION OF IN-IMPLANTED SILICON. Applied Surface Science, 63,, pp232-235.
• C O¿Moran, K G McGuigan, M O Henry and J D Campion,. 1992. A Simple Apparatus for Uniaxial Piezo-Spectroscopic Measurements. Measurement Science & Technology, 3, 337
• OMORAIN C MCGUIGAN KG HENRY MO CAMPION JD. 1992. A SIMPLE APPARATUS FOR UNIAXIAL PIEZOSPECTROSCOPIC MEASUREMENTS. Measurement Science & Technology, 3,, pp337-339.
• G J Hughes, L Roberts, M O Henry, K G McGuigan, G M O¿Connor, F G Anderson, G P Morgan and T J Glynn. 1991. An Investigation of the Passivating Effects of Hydrogen Sulphide on the GaAs (100) Surface. Materials Science And Engineering A, 139, 37
• G M O¿Connor, C J McDonagh, F G Anderson, T J Glynn, G P Morgan, G J Hughes, L Roberts and M O Henry. 1991. Raman Characterisation of Passivated GaAs surfaces. Applied Surface Science, 50, 312
• P A F Herbert, G M Crean, I Little, W M Kelly, G Hughes and M O Henry. 1991. Detection of Dry-etched induced damage by non-contact Photo-thermal Radiometry, Photoluminescence and Deep Level Transient Spectroscopy. Microelectronic Engineering, 13, 437
• HUGHES GJ ROBERTS L HENRY MO MCGUIGAN K OCONNOR GM ANDERSON FG MORGAN GP GLYNN T. 1991. AN INVESTIGATION OF THE PASSIVATING EFFECTS OF HYDROGEN-SULFIDE ON THE GAAS(100) SURFACE. Materials Science And Engineering B-solid State Materia, 9,, pp37-41.
• OCONNOR GM MCDONAGH CJ ANDERSON FG GLYNN TJ MORGAN GP HUGHES GJ ROBERTS L HENRY MO. 1991. RAMAN CHARACTERIZATION OF PASSIVATED GAAS-SURFACES. Applied Surface Science, 50,, pp312-316.
• K G McGuigan, M O Henry, E C Lightowlers and M H Nazare Mats. Res. Soc. Symp. Proc. 1990. Excitonic Recombination at a Transition Metal Related Defect in Silicon. 163, 299
• M C do Carmo, K G McGuigan, M O Henry, G Davies and E C Lightowlers, Mats. Res. Soc. Symp. Proc. 1990. Uniaxial Stress and Zeeman Measurements on the 943 meV Luminescence Band in Silicon. 163, 273
• M O Henry, K G McGuigan, M C do Carmo, M H Nazare and E C Lightowlers,. 1990. A Photoluminescence Investigation of Local-Mode Vibrations of the Beryllium Pair Centre in Silicon. Journal Of Physical Chemistry, 48, 9697
• HENRY MO MCGUIGAN KG DOCARMO MC NAZARE MH LIGHTOWLERS EC. 1990. A PHOTOLUMINESCENCE INVESTIGATION OF LOCAL MODE VIBRATIONS OF THE BERYLLIUM PAIR CENTER IN SILICON. Journal Of Physics-condensed Matter, 2,, pp9697-9700.
• K G McGuigan, M O Henry, E C Lightowlers, M C do Carmo and G Davies,. 1989. A Uniaxial Stress Study of a Copper Related Photoluiminescence Band in Silicon,. Materials Science And Engineering A, B4, 269
• M O Henry, J D Campion, K G McGuigan, E C Lightowlers and M L W Thewalt. 1989. A Photoluminescence Study of Zinc-Implanted Silicon,. Materials Science And Engineering A, B4, 201
• HENRY MO CAMPION JD MCGUIGAN KG THEWALT MLW LIGHTOWLERS EC. 1989. A PHOTOLUMINESCENCE STUDY OF ZINC-IMPLANTED SILICON. Materials Science And Engineering B-solid State Materia, 4,, pp201-204.
• MCGUIGAN KG HENRY MO CARMO MC DAVIES G LIGHTOWLERS EC. 1989. A UNIAXIAL-STRESS STUDY OF A COPPER-RELATED PHOTOLUMINESCENCE BAND IN SILICON. Materials Science And Engineering B-solid State Materia, 4,, pp269-272.
• K G McGuigan, M O Henry, E C Lightowlers, A G Steele and M L W Thewalt. 1988. A New Photoluminescence Band in Silicon Lightly Doped with Copper. Solid State Communications, 68, 7
• M O Henry, D J Beckett, A G Steele, M L W Thewalt and K G McGuigan. 1988. A Zinc Related Isoelectronic Bound Exciton in Silicon. Solid State Communications, 66, , pp689-698.
• S Charbonneau, W A McMullan, M O Henry and M L W Thewalt Mat. Res. Soc. Symp. Proc. 1988. Excitation Spectroscopy of the Defect Bound Excitons in MBE GaAs. 104, 549
• M O Henry, K G McGuigan and R C Barklie, Solid State Communications. 1987. Bound exciton recombination at Mn-Zn pair centres in Silicon. Solid State Communications, 64, 31
• M O Henry, K A Moloney, J Treacy, F J Mulligan and E C Lightowlers. 1984. Uniaxial stress studies of the Be pair bound exciton absorption spectrum in Silicon. Journal Of Physics C: Solid State Physics, 17, , pp6245-.
• M L W Thewalt, S P Watkins, U O Ziemelis, E C Lightowlers and M O Henry. 1982. Photoluminescence, lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon. Solid State Communications, 44, , pp573-.
• N. Killoran, D J Dunstan, M O Henry, E C Lightowlers and B C Cavenett. 1982. The isoelectronic centre in beryllium-doped silicon : Zeeman Study. Journal Of Physics C: Solid State Physics, 15, , pp6067-.
• P J Williams, L Eaves, P E Simmonds, M O Henry, E C Lightowlers and Ch Uihlein,. 1982. High resolution optical absorption spectra of chromium - related defects in GaAs and GaP. Journal Of Physics C: Solid State Physics, 15, , pp1337-1337.
• M O Henry, E C Lightowlers, N Killoran, D J Dunstan and B C Cavenett. 1981. Bound exciton recombination in beryllium - doped silicon. Journal Of Physics C: Solid State Physics, 14, L255
• M O Henry and E C Lightowlers,. 1980. Uniaxial stress analysis of bound exciton excited states in lithium-doped silicon. Journal Of Physics C: Solid State Physics, 13, , pp2215-2215.
• M O Henry and E C Lightowlers. 1979. Absorption and luminescence transitions involving excited hole states of excitons bound to lithium donors in silicon. Journal Of Physics C: Solid State Physics, 12, L485
• E C Lightowlers, M O Henry and C M Penchina, Proc. Int. Conf. Phys. Semiconductors, p307 (Institute of Physics, London, Conference Series No. 43). 1978. Temperature dependence of the fine structure in the luminescence and absorption of silicon based chromium-doped gallium arsenide.
• M O Henry and E C Lightowlers,. 1978. Excitation density dependence of the luminescence from bound multiexciton complexes in phosphorus doped silicon. Journal Of Physics C: Solid State Physics, 11, L555
• E C Lightowlers and M O Henry,. 1977. Fine structure in the bound exciton and multiple bound exciton luminescence from aluminium-doped silicon. Journal Of Physics C: Solid State Physics, 10, L246
• E C Lightowlers, M O Henry and M A Vouk,. 1977. Luminescence associated with transitions from an excited state of the bound excitons in P, As, Sb, and Bi doped silicon. Journal Of Physics C: Solid State Physics, 10, L713
• K P O¿Donnell, M O Henry, B Henderson and D O¿Connell. 1977. Axial Cr3+ centres in Mg0 - E.P.R. and fluorescence studies. Journal Of Physics C: Solid State Physics, 10, , pp3877-3877.
• M O Henry and E C Lightowlers. 1977. Absorption due to the creation of bound excitons in phosphorus-doped silicon. Journal Of Physics C: Solid State Physics, 10, L601
• M O Henry, J P Larkin and G F Imbusch. 1976. Nature of the broadband luminescence centre in Mg0 : Cr3+ (1983). Physical Review B-condensed Matter, 13,
• M O Henry, J P Larkin and G F Imbusch. 1975. Nature of the luminescence from YAG : Cr3+. Proceedings Of Royal Irish Academy, 75, 97
• J P Hehir, M O Henry, J P Larkin and G F Imbusch,. 1974. Luminescence from chromium-doped yttrium aluminium garnet. Journal Of Physics C: Solid State Physics, 7, 2241
• J P Hehir, M O Henry, J P Larkin and G F Imbusch. 1974. Luminescence from chromium-doped yttrium aluminium garnet. Journal Of Physics C: Solid State Physics, 7, 2241

Selected Non-peer Reviewed Journals

• M.O. Henry, C.A. Frehill, E. McGlynn and E.C. Lightowlers,. 1998. Isotope effects in the study of some impurity centres in silicon. Semiconductor News, 7,
• E. McGlynn, M.O. Henry, S.E. Daly, K.G. McGuigan,.in Ed R. Jones, NATO ASI Partnership Sub-Series 3. 1996. Complexes of oxygen and Group II impurities in silicon. High Technology, 17, pp355-362.

• E. McGlynn, J. Fryar, G. Tobin, C. Roy, M.O. Henry, B. Ryan, J-P. Mosnier, J.G. Lunney, E. DePosada, . ,, Effect of Polycrystallinity on the Optical Properties of Highly Oriented ZnO Deposited by PLD, 14th Annual Irish Plasma and Beam Processing Group Conference. May 2003, - , Dublin
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• Justina Grabowska, R.T. Rajendra Kumar, C. McLoughlin, K.K. Nanda, J.P. Mosnier, M.O. Henry, Enda McGlynn,, ZnO and related nanostructures for nanophotonic and electronic devices: growth and analysis,, 17th Annual Irish Plasma and Beam Processing Group Conference,, - , Dublin
• E. McGlynn, G. Tobin, M.O. Henry, J.-P. Mosnier,, Stimulated emission from ZnO: exciton nano-confinement and surface quenching., 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006),, 29-OCT-06 - 31-OCT-06, Cranfield, UK
• R. O¿Haire, M.A.G. Boyle, K.G. McGuigan, E. McGlynn, M.O. Henry, J.-P. Mosnier,, ZnO Thin Films grown via PLD for the Photocatalytic Inactivation of Pathogenic Biomaterial., EMRS 2006 Conference, 29-MAY-06 - 02-JUN-06, Nice, France.
• B. Doggett, S. Chakrabarti, R. O¿Haire, A. Meaney, E. McGlynn, M.O. Henry, J.-P. Mosnier,, Electrical Characterisation of Phosphorus¿Doped ZnO Thin Films grown by Pulsed Laser Deposition., EMRS 2006 Conference,, 29-MAY-06 - 02-JUN-06, Nice, France.
• R.T. Rajendra Kumar, J. Grabowska, J.P. Mosnier, M.O. Henry, E. McGlynn., Morphological control of ZnO nanostructures on silicon substrates, EMRS 2006 Conference, 29-MAY-06 - 02-JUN-06, Nice, France
• Justina Grabowska, Karuna Kar Nanda, R.T. Rajendra-Kumar, J. P. Mosnier, M.O. Henry, Simon B. Newcomb, Patrick McNally, Lisa O¿Reilly, Xu Lu, Enda McGlynn,, Self-organized, horizontal ZnAl2O4 nanowires grown on c-sapphire., EMRS 2006 Conference,, 29-MAY-06 - 02-JUN-06, Nice, France.
• S. Chakrabarti, B. Doggett, R. O'Haire, E. McGlynn, M.O. Henry, A. Meaney, J.-P. Mosnier,, Characterization of Nitrogen-doped ZnO Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Sapphire Substrates., EMRS 2006 Conference,, 29-MAY-06 - 02-JUN-06, Nice, France
• A. Meaney, J.-R. Duclere, J.-P. Mosnier, R. O¿Haire, E. McGlynn, M.O. Henry., Phosphorous Doping of ZnO Thin Films grown by a ZnO/ZnO:P2O5 Pulsed Laser Deposition Sequential Process, Third SOXESS EU Network Workshop on ZnO,, 28-SEP-05 - 01-OCT-05, Gallipoli, Italy
• M. Novotny, J.-R. Duclère, E. McGlynn, M. O. Henry, R. O'Haire and J.-P. Mosnier,, Nitrogen doping of ZnO thin films grown by plasma-assisted pulsed-laser deposition., 8th International Conference on Laser Ablation, 11-SEP-05 - 16-SEP-05, Banff, Canada
• J.-P. Mosnier, R. O¿Haire, A. Meaney, E. McGlynn, M. O. Henry, J.-R. Duclere., ZnO nanostructures grown by the pulsed laser deposition technique, 8th International Conference on Laser Ablation,, 11-SEP-05 - 16-SEP-05, Banff, Canada
• J.-R. Duclère, M. Novotny, A. Meaney, R. O¿Haire, E. McGlynn, M. O. Henry, J.-P. Mosnier., Properties of Li-, P- and N-doped ZnO Thin Films prepared by Pulsed Laser Deposition, EMRS 2005 Conference,, 31-MAY-05 - 03-JUN-05, Strasbourg, France.
• A. Meaney, J.-R. Duclere, E. McGlynn, J.-P. Mosnier, R. O'Haire, M. O. Henry., Comparison of Structural, Optical and Electrical Properties of Undoped ZnO Thin Films Grown on r- and c-Al2O3 Substrates using Pulsed Laser Deposition, EMRS 2005 Conference, 31-MAY-05 - 03-JUN-05, Strasbourg, France
• R.O¿Haire, A. Meaney, E. McGlynn, M.O. Henry, J.-R. Duclère, J.-P. Mosnier., Growth of Crystalline ZnO Nanostructures using Pulsed Laser Deposition, EMRS 2005 Conference, 31-MAY-05 - 03-JUN-05, Strasbourg, France
• J. Grabowska, A. Meaney, K. K. Nanda, E. McGlynn, J.-P. Mosnier and M. O. Henry. ., Laterally and vertically grown ZnO nanostructures on sapphire, Opto-Ireland (SPIE regional meeting on optoelectronics, photonics and imaging),, 04-APR-05 - 06-APR-05, Dublin, Ireland.
• J.-R. Duclère, R. O¿Haire, A. Meaney, K. Johnston, I. Reid, G. Tobin, J.-P. Mosnier, M. Guilloux-Viry, E. McGlynn, M.O. Henry., Fabrication of P-type doped ZnO thin films using pulsed laser deposition for device applications, 5th International Conference on Materials for Microelectronics & Nanoengineering, 13-SEP-04 - 14-SEP-04, University of Southampton, UK
• J. Grabowska, K. K. Nanda, E. McGlynn, J.-P. Mosnier and M. O. Henry, ., Studying the growth conditions, the alignment and structure of the ZnO nanorods., 9th International Conference on Plasma Surface Engineering,, 13-SEP-04 - 17-SEP-04, Garmisch-Partenkirchen, Germany
• J. Grabowska, K.K. Nanda, E. McGlynn, J.-P. Mosnier, M.O. Henry, A. Beaucamp, A. Meaney,, Synthesis and photoluminescence of ZnO nanowires / nanorods., 5th International Conference on Materials for Microelectronics & Nanoengineering, 13-SEP-04 - 14-SEP-04, University of Southampton, UK
• K.S. Zhuravlev, V.A Kolosanov, A.G. Milekhin, V.G. Polovinkin, T.S. Shamirzaev,Yu.N. Rakov, Yu.B. Myakishev, J. Fryar, E. McGlynn, M.O. Henry,, Infrared light emission from GaAs MESFET¿s operating at avalanche breakdown conditions, HCIS13 Meeting, 28-JUL-03 - 01-AUG-03, Modena Italy.
• B. J. Ryan, M. O. Henry, E. McGlynn and J. Fryar,, Investigation of optical metastability in GaN using photoluminescence spectroscopy, International Conference on Defects in Semiconductors,, 28-JUL-03 - 01-AUG-03, Aarhus
• J. Fryar, E. McGlynn, M. O. Henry, A. A. Cafolla and C. J. Hanson, Excitonic properties of the polar faces of bulk ZnO after wet etching, International Conference on Defects in Semiconductors,, 28-JUL-03 - 01-AUG-03, Aarhus,
• G. Tobin, E. McGlynn, M. O. Henry, J. P. Mosnier, J. G. Lunney, D. O'Mahony and E. dePosada, Ultraviolet stimulated emission from bulk and polycrystalline ZnO thin films with varying grain sizes,, International Conference on Defects in Semiconductors, 28-JUL-03 - 01-AUG-03, Aarhus
• M O Henry, E McGlynn, J Fryar, S Lindner, J Bollmann and ISOLDE Collaboration. , The Evolution of Point Defects in Semiconductors Studied using the Decay of Implanted Radioactive Isotopes, European Materials Research Society Meeting, 30-MAY-00 - 02-JUN-00, Strasbourg
• K W Mah, E McGlynn, J-P Mosnier, M O Henry, J Castro, D O'Mahony and J G Lunney. , Photoluminescence Study of GaN Grown by Pulsed Laser Deposition, European Materials Research Society Meeting, 30-MAY-00 - 02-JUN-00, Strasbourg
• V.A. Karkov, H. H. Cheng, A.I. Nikiforov, V.A. Cherepanov, O.P. Pchelyakov, K.S. Zhuravlev, A.B. Talochkin, E. McGlynn and M.O. Henry, , RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots, Proceedings of the International Joint Conference on Silicon Epitaxy and Heterostructures,, 12-SEP-99 - 17-SEP-99, Miyagi, Japan.
• M. Gibson, E. McGlynn and M.O. Henry, , Study of bound exciton excited state structure using photothermal ionisation spectroscopy (to be published in Physica B) , Proc. 20th Int. Conf. on Defects in Semiconductors, 26-JUL-99 - 30-JUL-99, Berkeley, USA.
• J. P. Leitão, M. C. Carmo, M. O. Henry, E. McGlynn, J. Bolmann and S. Lindner. , The 777 meV photoluminescence band in Si: Pt (to be published in Physica B), Proc. 20th Int. Conf. on Defects in Semiconductors, 26-JUL-99 - 30-JUL-99, Berkeley, USA.
• J. Bollmann, S. Lindner, M.O. Henry, E. McGlynn, and the ISOLDE Collaboration , Deep level anomalies in silicon doped with gold (to be published in Physica B), Proc. 20th Int. Conf. on Defects in Semiconductors, 06-JUL-99 - 30-JUL-99, Berkeley, USA.
• C.A. Frehill, M.O. Henry, E. McGlynn, E.C. Lightowlers and A. Safanov , Cadmium-Lithium defects in silicon , European Materials Research Society Spring Meeting, 22-JUN-98 - 30-JUN-98, Strasbourg
• M.O. Henry , Photoluminescence measurements using radioactive isotopes Workshop on "Solid state physics - New opportunities with intense radioactive beams", ?, 03-JUN-98 - 06-JUN-98, Rutherford -SIRIUS Laboratory, UK
• M O Henry, E Alves, J Bollmann, A Burchard, M Deicher, M Fauciulli, D Forkel Wirth, M H Knoph, S Lindner, R Magerle, E McGlynn, K G Soares, A Stotzler and G Weyer. , Radioactive Isotope Identification of Au and Pt photoluminescence centres in silicon , 8th International Conference on Shallow Levels in Semiconductors, 02-JUN-98 - 05-JUN-98, Montpellier
• J Bollmann, S Lindner, M O Henry, E McGlynn, M Deicher, M H Knopf, A Stotzler A Burchard, Properties of Tungsten related defects in silicon, 24th International Conference on the Physics of Semiconductors, 21-MAY-98 - 22-MAY-98, Jerusalem
• J Bollmann, S Lindner, E Alves, A Burchard, M Deicher, M Fauciulli, D Forkel-Wirth, M O Henry, M H Knopf, R Magerle, E McGlynn, K G McGuigan, J C Soares, A Stotzler and G Weyer. , Identification of deep states due to Au/Pt/Ir/Os in silicon using radioactive transformations, 8th International Conference on Shallow Levels in Semiconductors, 02-MAY-98 - 03-MAY-98, Montpellier
• E Alves, J Bollmann, M Deicher, M C do Carmo, M O Henry, M H A Knopf, J P Leitao, R Magerle and C McDonagh. , The Photoluminescence of Pt - implanted Silicon , 19th International Conference on Defects in Semiconductors, 01-FEB-97 - 07-FEB-97, Aveiro
• C A Frehill, M O Henry, E McGlynn, S E Daly, M Deicher, R Margerle, K G McGuigan, A Safanov and E C Lightowlers , Novel Luminescent Centres in Cadmium Doped Silicon, 19th International Conference on Defects in Semiconductors,, 01-FEB-97 - 07-FEB-97, Aveiro
• M O Henry, S E Daly, C A Frehill, E McGlynn, C McDonagh, E Alves, J C Soares and D Forkel , A photoluminescence Study of Gold and Platinum Related Defects in Silicon Using Radioactive Transformations, 23rd International Conference on the Physics of Semiconductors, 02-MAY-96 - 05-MAY-96, Berlin
• S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, K.G. McGuigan, M.C.do Carmo and M.H. Nazare , The complexing of oxygen with Be, Cd, and Zn in silicon, European Materials Research Society Spring Meeting,, 03-APR-96 - 06-APR-96, Strasbourg
• S.E. Daly, M.O. Henry, E. Alves, M.F. daSilva, J.C. Soares, R. Gwilliam, B.J. Sealy, K. Freitag, R. Vianden and D. Stievenard , Rutherford Backscattering and photoluminescence studies of erbium-implanted GaAs , Materials Research Society Fall Meeting, 04-SEP-95 - 06-SEP-95, ?
• S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, M.C. doCarmo and M.H. Nazare , Oxygen complexing with group II impurities in silicon, 18th International Conference on Defects in Semiconductors, 04-JUL-95 - 05-JUL-95, Sendai, Japan.
• S.E. Daly, M.O. Henry, C.A. Frehill, K. Freitag, R. Vianden and D. Forkel , The chemical identification of defect impurities using radioactive isotopes, 18th International Conference on Defects in Semiconductors, 04-JUL-95 - 05-JUL-95, Sendai, Japan.
• M.O. Henry, Transformation studies of defects in semiconductors Workshop on "Solid state physics, biophysics, medicine applications of radioactive beams" , ?, 02-JUN-95 - 03-JUN-95, GANIL-CIRIL Facility, Caen (France)
• M.O. Henry, Photoluminescence analysis of semiconductors Workshop on "Radioactive techniques in Solid State Physics", *, 02-JUN-94 - 03-JUN-94, Bad Honnef, Germany.
• M.O. Henry, T.B. Kehoe, M.H. Nazare and E.C. Lightowlers, The correlation of nuclear and photoluminescence characterisation of In-implanted silicon, European Materials Research Society Spring Meeting, 02-JUL-93 - 05-JUL-93, Strasbourg
• G.J. Hughes, L.Roberts, M.O. Henry, K.G. McGuigan, G.M. O'Connor, F.G. Anderson, G.P. Morgan and T.J. Glynn , An investigation of the passivating effects of hydrogen sulphide on the GaAs(100) surface, European Materials Research Society Spring Meeting, 02-MAY-91 - 06-MAY-91, Strasbourg
• G.M. O'Connor, C.J. McDonagh, F.G. Anderson, T.J. Glynn, G.P. Morgan, G.J. Hughes, L. Roberts and M.O. Henry, Raman characterisation of passivated GaAs surfaces, European Materials Research Society Spring Meeting, 02-MAY-91 - 06-MAY-91, Strasbourg
• M.C.doCarmo, K.G. McGuigan, M.O. Henry, G. Davies and E.C. Lightowlers , Uniaxial stress and Zeeman measurements on the 943meV Luminescence band in silicon, Materials Research Society Fall Meeting, 01-JUN-90 - 05-JUN-90, ?
• K.G. McGuigan, M.O. Henry, E.C. Lightowlers and M.H. Nazare , Excitonic recombination at a transition metal related defect in silicon, Materials Research Society Fall Meeting, 01-JUN-90 - 05-JUN-90, ?
• M.O. Henry, J.D. Campion, K.G. McGuigan, E.C. Lightowlers and M.L.W. Thewalt , A photoluminescence study of zinc-implanted silicon, European Materials Research Society Spring Meeting, 01-AUG-89 - 05-AUG-89, Strasbourg
• K.G. McGuigan, M.O. Henry, E.C. Lightowlers, M.C. doCarmo and G. Davies , A uniaxial stress study of a copper-related photoluminescence band in silicon, European Materials Research Society Spring Meeting, 02-JUN-89 - 06-JUN-89, Strasbourg
• S. Charbonneau, W.A. McMullan, M.O. Henry and M.L.W. Thewalt , Excitation spectroscopy of defect bound excitons in MBE gallium arsenide, Materials Research Society Fall Meeting, 02-MAR-87 - 05-MAR-87, *
• M.O. Henry and C.M. Penchina , Temperature dependance of the fine structure in the luminescence and absorption spectra of chromium-doped gallium arsenide E.C. Lightowlers, 19th International Conference on the Physics of Semiconductors, 01-MAY-78 - 05-MAY-78, Edinburgh