Physics

Prof. Greg Hughes

Name:Prof. Greg Hughes
Phone Number5390
Room:N138
E-Mail Address:
Work Area:Academic

Prof. Greg Hughes

Prof. Greg Hughes

Biographical Details:

Dr. Greg Hughes obtained a B.Sc (1st class honours) in Chemistry from the University of Ulster in 1979. He subsequently received a PhD in surface physics from the same University under the supervision of Prof R.H.Williams FRS in 1983. Following two years post-doctoral research in the IBM research division at Yorktown Heights, he joined the School of Physical Sciences at Dublin City University (DCU) on the lecturing staff. He spent the 1993/94 academic year on sabbatical at the Technical University of Berlin on an Alexander von Humboldt research fellowship. He was the first university based academic to participate in the Intel Sponsored Faculty Work Programme, spending three months (Feb-April 2000) at Intel plant in Leixlip. He was appointed as Visiting Research Associate Professor at Boston University in the summer of 2001. In December 2000, he was appointed Senior Lecturer in Physics and is a research group leader in the National Centre for Sensor Research. He has published over seventy papers in the field of surface science.

Research Interests:

Investigation of chemical interactions on semiconductor surfaces, including Schottky Barrier formation, surface exchange reactions, surface chemical passivation and heteroepitaxial growth. Investigations of the interactions of group VI elements with semiconductor surfaces with the specific objective of improving the electrical characteristics of multiplayer structures fabricated on these surfaces. Electrical and chemical characterisation of thin film dielectric layers used in advanced transistor fabrication technology. Developing an understanding of the chemical and structural interactions of organic molecules with semiconductor surfaces. These studies involve investigation of direct bonding mechanisms between organic molecules and surface atoms with a view to exploiting these hybrid organic-inorganic structures for novel electronic device and sensor applications.

Selected Peer Reviewed Journals

  • Prof Greg J Hughes. .
  • B. Brennan, M. Milojevic, C.L. Hinkle, F.S. Aguirre-Tostado, G. Hughes and R. M. Wallace,. 2011. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As. Applied Surface Science, 257, , pp4082-4090.
  • J. G. Lozano, J. Bogan, B. Brennan and G. Hughes. 2011. Barrier behaviour and interdiffusion in thermally evaporated Mn/Cu heterostructures onto SiO2 substrates. Applied Physics Letters, 98, , pp12311-.
  • Mahua Biswas, Yun S. Jung, Hong K. Kim, Kumarrappan K, Gregory J. Hughes, S.Newcomb, Martin O. Henry, Enda McGlynn. 2011. A Study of the Microscopic Origins of the Surface Exciton Photoluminescence Peak seen in ZnO Nanostructures. Physical Review B-condensed Matter, 83, , pp235320-.
  • P.Casey, J. Bogan, J.G Lozano, P.D. Nellist, G. Hughes. 2011. Chemical and structural investigation of the role of both metallic manganese and manganese oxide in the formation of manganese silicate barrier layers on SiO2. Journal Of Applied Physics, 110,, pp054507-.
  • Patrick Casey and Greg Hughes. 2011. High resolution photoemission study of the formation and thermal stability of Mg silicide on silicon. Thin Solid Films, 519, , pp1861-1865.
  • Patrick Casey, Barry Brennan, Justin Bogan and Greg Hughes.. 2011. Synchrotron radiation photoemission study of in-situ manganese silicate formation on SiO2 for barrier layer applications Patrick Casey, Barry Brennan, Justin Bogan and Greg Hughes.. Applied Physics Letters, 98, , pp113508-.
  • Robert OConnor, Greg Hughes and Thomas Kauerauf. 2011. TIME DEPENDENT DIELECTRIC BREAKDOWN AND STRESS INDUCED LEAKAGE CURRENT CHARACTERISTICS OF 0.7nm EOT HfO2 P-FETs. IEEE Transactions on Device and Materials Reliability. Ieee Transactions On Electron Devices, 99, pp1-.
  • Robert OConnor, Greg Hughes, Thomas Kauerauf,. 2011. The Effect of a Post Processing Thermal Anneal on Pre-existing and Stress Induced Electrically Active Defects in Ultra-thin SiON Dielectric Layers.. Microelectronic Engineering, 51, , pp524-528.
  • Robert OConnor, Greg Hughes, Thomas Kauerauf, Lars-Ake Ragnarsson. 2011. Reliability of thin ZrO2 gate dielectric layers. Microelectronic Engineering, 51, , pp524-528.
  • . OConnor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace , and P.K. Hurley.. 2011. A systematic study of (NH4)2S passivation (1%, 5%, 10%, 22%) on the interface properties of the Al2O3/In0.53Ga0.47-As/InP system for n and p-type In0.53Ga0.47-As epitaxial layers. . OConnor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace , and P.K. Hurley.. Journal Of Applied Physics, 109, , pp024101-.
  • P.Casey , J. Bogan, G. Hughes. 2011. Photoemission study of carbon depletion from ultra low-κ carbon doped oxide surfaces during the growth of Mn silicate barrier layers. 110,, pp124512-.
  • S. McDonnell, B. Brennan, P. Casey and G. J. Hughes. 2011. High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system.. Surface Science, 605, 23-24, pp1925-1928.
  • B. Brennan and G. Hughes. 2010. Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission. Journal Of Applied Physics, 108, , pp053516-.
  • Barry Brennan and Greg Hughes. 2010. Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission. Journal Of Applied Physics, 108, , pp053516-.
  • Barry Brennan, Stephen McDonnell and Greg Hughes. 2010. Photoemission studies of the initial interface formation of ultrathin MgO dielectric layers on Si(111) surfaces .. Thin Solid Films, 518, , pp1980-1984.
  • D. Byrne, E. McGlynn, K. Kumar, M. Biswas, M. O. Henry and G. Hughes. 2010. A study of drop-coated and chemical bath-deposited buffer layers for vapour phase deposition of large area, aligned, zinc oxide nanorod arrays. Crystal Growth & Design (print), 10, 5, pp2400-2408.
  • D. Byrne, E. McGlynn, M.O. Henry, K. Kumar, G. Hughes. 2010. A novel, substrate independent three step process for the growth of uniform ZnO nanorod arrays. Thin Solid Films, 518, , pp4489-4492.
  • Miranda, E., Martin-Martinez, J., O'Connor, E., Hughes, G.,Casey, P., Cherkaoui, K.,Monaghan, S., Long, R., O'Connell, D., Hurley, P. K. 2010. Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. Microelectronics Journal, 49, , pp9-11.
  • Patrick Casey and Greg Hughes. 2010. Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition. Applied Surface Science, 256, , pp7530-7534.
  • Patrick Casey and Greg Hughes. 2010. Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition. Applied Surface Science, 256, , pp7530-7534.
  • Patrick Casey and Greg Hughes. 2010. Photoemission Study of the SiO2 conversion mechanism to magnesium Silicate. Journal Of Applied Physics, 107, , pp074107-.
  • Robert J. Young, Lorenzo O. Mereni, Nikolay Petkov, Gabrielle R. Knight, Valeria Dimastrodonato, Paul K. Hurley, Greg Hughes and Emanuele Pelucchi. 2010. Low-angle misorientation dependence of the optical properties of InGaAs/AlInAs quantum wells.. Journal Of Crystal Growth, 312, 9, pp1546-1550.
  • Robert OConnor, Greg Hughes, Patrick Casey and Simon Newcombe. 2010. Degradation and Breakdown Characteristics of thin MgO Dielectric Layers. Journal Of Applied Physics, 107, , pp024501-.
  • B. Brennan, M. Milojevic, F.S. Aguirre-Tostado, C.L. Hinkle, P.K. Hurley, J. Kim, G. Hughes, and R.M. Wallace. 2009. Half-cycle ALD reaction study using O3 and H2O oxidation of the (NH4)2S passivated In0.53Ga0.47As surface. Electrochemistry Communications, 12, , ppH205-.
  • C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace. 2009. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning. Applied Physics Letters, 94, , pp162101-.
  • E. Miranda, E. OConnor, , K. Cherkaoui, S. Monaghan, R. Long, D. OConnell, P.K. Hurley, G. Hughes and P. Casey. 2009. Electrical characterization of the soft breakdown failure mode in MgO layers. Applied Physics Letters, 95, , pp012901-.
  • E. Miranda, E. OConnor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. OConnell, P.K. Hurley.. 2009. Degradation dynamics and breakdown of MgO gate oxides. Microelectronic Engineering, 86, , pp1715-1717.
  • Ian Reid, Yufeng Zhang, Alex Demasi, Andrew Blueser, Louis Piper, James E. Downes, Anne Matsuura, Greg Hughes and Kevin E. Smith. 2009. Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP). Applied Surface Science,
  • P. Casey, E. OConnor, R. Long, B. Brennan, D.OConnell, P. Hurley and G. Hughes. 2009. Growth, Ambient Stability and Electrical Characterisation of MgO thin films on Si. Microelectronic Engineering, 86, , pp1711-1714.
  • R. D. Long, . OConnor, S. Monaghan, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley.P. Casey and G. Hughes S. B. Newcomb.N. Goel, W. Tsai. 2009. Structural Analysis, Elemental Profiling, and Electrical Characterisation of HfO2 Thin Films Deposited on In0.53Ga0.47As Surfaces by Atomic Layer Deposition.. Journal Of Applied Physics, 106, , pp084508-.
  • Robert OConnor, Greg Hughes, Patrick Casey and Simon Newcombe. 2009. Degradation and Breakdown Characteristics of thin MgO Dielectric Layers. Journal Of Applied Physics,
  • Stephen McDonnell, Barry Brennan and Greg Hughes. 2009. Evidence of atomic disruption at the Si/SiOx interface following HfO2 deposition .. Applied Physics Letters, 95, , pp072903-.
  • C. L. Hinkle, A. M. Sonnet, E. M. Vogel , S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace. 2008. GaAs interfacial self-cleaning by atomic layer deposition. Applied Physics Letters, , pp071901-.
  • E. OConnor, R. Long, K. Thomas, F. Chalvet, M. E. Pemble, and P. K. Hurley, B. Brennan, G. Hughes. S. B. Newcomb. 2008. In-situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric.. Applied Physics Letters, 92, , pp022902-.
  • F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes. 2008. Indium stability on InGaAs during atomic H surface cleaning. Applied Physics Letters, 92, , pp171906-.
  • K. Cherkaoui, S. Monaghan, M.A. Negara, M. Modreanu, P.K. Hurley, D. OConnell, S. McDonnell, G. Hughes, S. Wright, R.C. Barklie, R. Dunne, S.Cosgrove, J. Roche, P. Bailey and T.C.Q. Noakes. 2008. Electrical, Structural and Chemical Properties of HfO2 Films Formed by Electron Beam Evaporation. Journal Of Applied Physics, , pp064113-.
  • C. L. Hinkle, A. M. Sonnet, and E. M. Vogel S. McDonnell and G. J.Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace. 2007. Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation. Applied Physics Letters, 91, , pp163512-.
  • I. Reid, Y. Zhang, A. DeMasi, G. Hughes and K. E. Smith. 2007. Electronic structure characterization of Ultra Low-k (ULK) Carbon Doped Oxide (CDO) using X-ray emission spectroscopy. Thin Solid Films, Available on line 18th Sept,
  • P.K. Hurley , K. Cherkaoui , S. McDonnell , G. Hughes , A.W. Groenland. 2007. Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks. Microelectronics Journal, 47, , pp1195-1202.
  • P.K. Hurley , K. Cherkaoui , S. McDonnell , G. Hughes , A.W. Groenland. 2007. Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks. Microelectronic Engineering, 47, , pp1195-1202.
  • Sergey A. Krasnikov, Greg Hughes and Attilio A. Cafolla. 2007. Two types of the sulphur induced reconstructions of Au(110) surface. Surface Science, 601, , pp3506-3511.
  • I Reid and G Hughes. 2007. Investigation of varying C4F8/O2 gas ratios on the plasma etching of carbon doped ultra-low-k dielectric layers. Semiconductor Science And Technology, 22, , pp636-640.
  • I. Reid and G. Hughes,. 2006. Influence of plasma parameters on the chemical composition of steady state fluorocarbon films deposited on carbon doped low-k dielectric layers during etching. Semiconductor Science And Technology, 21, 9, pp1354-1357.
  • I. Reid, V. Krastev and G. Hughes.. 2006. Suppression of carbon depletion from carbon-doped low-k dielectric layers during fluorocarbon based plasma etching. Microelectronic Engineering,
  • Mahfujur Rahman, I. Reid, P. Duggan, D.P. Dowling, G. Hughes and M.S.J. Hashmi. 2006. Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature. Surface And Coatings Technology,
  • O. McDonald, A. A. Cafolla, D. Carty, G. Sheerin and G. Hughes. 2006. Photoemission, NEXAFS and STM studies of pentacene thin films on Au(100). Surface Science, 600, 16, pp3217-3225.
  • O. McDonald, A. A. Cafolla, Zheshen Li and G. Hughes. 2006. Synchrotron photoemission studies of pentacene films on Cu(110). Surface Science, 600, 9, pp1909-1916.
  • R. OConnor, G. Hughes, K.E.Smith. 2006. X-ray photoemission and x-ray absorption studies of Hf-silicate dielectric layers. Applied Surface Science,
  • R. OConnor, S. McDonnell, G. Hughes and K.E.Smith.. 2006. Photoemission studies of pulsed RF plasma nitrided ultrathin SiON dielectric layers. Surface Science, 600, , pp532-536.
  • G. Hughes, D. Carty and A.A. Cafolla. 2005. Core level photoemission studies of the interaction of pentacene with the Si(111) (7 7) surface,. Surface Science, 582, 1-3, pp90-96.
  • G. Hughes, D. Carty, O. McDonald and A.A. Cafolla. 2005. Synchrotron radiation photoemission studies of the pentaceneAg/Si(111) 3 3 interface. Surface Science, 580, , pp167-172.
  • Robert OConnor, Greg Hughes, Robin Degraeve, Ben Kaczer. 2005. Temperature-accelerated breakdown in ultra-thin SiON dielectrics. Semiconductor Science And Technology, 19, 11, pp1254-1258.
  • Robert OConnor, Stephen McDonnell, Greg Hughes and Robin Degraeve.. 2005. Low voltage stress-induced leakage current in 1.4-2.1nm SiON and HfSiON gate dielectric layers. Semiconductor Science And Technology, 20, , pp668-672.
  • V.Krastev, I.Reid, C.Galassi, G.Hughes and E.McGlynn,. 2005. Influence of C4F8/Ar/O2 Plasma Etching on SiO2 Surface Chemistry. Journal Of Materials Science-materials In Electronics, 16, , pp541-541.
  • OConnor,R Hughes,G.Degraeve,R.,Kaczer,B. 2005. Charge trapping in MOSFETs with HfSiON dielectrics during electrical stress. Microelectronic Engineering, 77, 3-4, pp302-309.
  • OConnor,R.,Hughes,G. Degraeve, R, Kaczer,B, Kauerau, B. 2005. Reliability of HfSiON gate dielectrics. Semiconductor Science And Technology, 20, 1, pp69-71.
  • Ph. Guaino, D. Carty, , O.McDonald, G. Hughes and A.A.Cafolla.. 2004. Long-range order in a multilayer organic film templated by a molecular induced surface reconstruction:Pentacene on Au(110). Applied Physics Letters, 85, 14, pp2777-2779.
  • Robert O'Connor, Robin Degraeve, Ben Kaczer, Anabela Veloso, Greg Hughes and Guido Groeseneken. 2004. Weibull Slope and Voltage Acceleration of Ultra-thin (1.1- 1.45 nm EOT) Oxynitrides.. Microelectronic Engineering, *,
  • OConnor,R. Hughes,G. Degraeve,R, Kaczer,B. 2004. Progressive breakdown in ultra-thin SiON dielectrics and its effect on transistor performance. Microelectronic Engineering, 45, , pp869-874.
  • AlShamaileh,E. Pussi,K. McEvoy,T, Lindroos,M. Hughes, G.Cafolla,A.A. 2004. 65. Structural study of the Cu(100) p(2x2)-Sb surface alloy using low energy electron diffraction. Surface Science, 566-568, , pp52-57.
  • Guaino,Ph. Carty,D.McDonald,O. Hughes,G. Cafolla,A.A. 2004. . Applied Physics Letters, 85, 14, pp2777-2779.
  • Ph. Guaino, D. Carty, G. Hughes, P. Moriarty and A.A.Cafolla. 2003. Scanning Tunneling Microscopy Study of Pentacene Adsorption on the Ag/Si(111)-(v3 x v3)R30o.. Applied Physics Letters, 212-213,, pp537-541.
  • Ph.Guaino, A.A.Cafolla, D.Carty, G.Sheerin and G.Hughes. 2003. An STM investigation of the interaction and ordering of pentacene molecules on the Ag/Si(111) -(3 x 3)R30o surface. Surface Science, 540,, pp107-116.
  • Ph. Guaino, A.A.Cafolla , O.McDonald, D. Carty, G.Sheerin and G. Hughes.. 2003. Scanning Tunnelling spectroscopy of low pentacene coverage on the Ag/Si(111)-(v3 x v3)R30o surface. Journal Of Physics Condensed Matter, 15,, pp1-6.
  • Cormac McGuinness, Gregory Hughes, Jason Roche, Dongfeng Fu, James E. Downes and Kevin E. Smith. 2003. Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption. Journal Of Applied Physics, 94,, pp3919-3922.
  • Greg Hughes, Jason Roche, Darren Carty and Tony Cafolla Kevin E. Smith. 2002. Core Level Photoemission and Scanning Tunneling Microscopy study of the interaction of pentacene with the Si(100) surface.. Journal Of Vacuum Science & Technology A-vacuum Surface, 20(4),, pp1620-1625.
  • J.Roche, P.Ryan and G.J.Hughes. 2001. Core level photoemission studies of the sulphur terminated Ge(100) surface. Applied Surface Science, 6936,, pp1-4.
  • G.J.Hughes, P.Ryan,P. Quinn and A.A.Cafolla. 2000. The deposition of transition metal layers on sulphur terminated InP(100) surfaces studies by core level photoemission spectroscopy. Vacuum, 57,, pp131-138.
  • J.Roche, P.Ryan and G.J.Hughes. 2000. Core level photoemission studies of the sulphur terminated Si(100) surface. Surface Science, 465,, pp115-119.
  • G.J.Hughes, P Ryan, P.Quinn and A.A. Cafolla. 1999. Core level photoemission studies of the deposition of thin iron layers on sulphur terminated InP(100) surfaces. Applied Surface Science, 147,, pp201-206.
  • G.J.Hughes, P Ryan, P.Quinn and A.A. Cafolla. 1999. Core level photoemission studies of the deposition of thin manganese layers on sulphur terminated InP(100) surfaces.. Surface Science, 431,, pp1-7.
  • Deegan T Hughes G. 1998. An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces. Applied Surface Science, 123,, pp66-70.
  • Hearne S Hughes G. 1998. Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100)surfaces. Applied Surface Science, 123,, pp176-180.
  • Rizza R Fitzmaurice D Hearne S Hughes G Spoto G Ciliberto E Kerp H Schropp R. 1997. Self-assembly of monolayers of semiconductor nanocrystallites. Chemistry Of Materials, 9,, pp2969-2982.
  • Moriarty P Ma YR Dunn AW Beton PH Henini M McGinley C McLoughlin E Cafolla AA Hughes G Downes S Teehan D Murphy B. 1997. Absence of long-range ordered reconstruction on the GaAs(311)A surface. Physical Review B-condensed Matter, 55,, pp15397-15400.
  • Cafolla AA McGinley C McLoughlin E Hughes G Moriarty P Dunn AW Ma YR Teehan D Murphy B Downes S Woolf DA. 1997. Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction. Surface Science, 377,, pp130-134.
  • HUGHES G SPRINGER C RESCH U ESSER N RICHTER W. 1995. A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF MOLECULAR SULFUR ADSORPTION ON THE GAAS(100) SURFACE. Journal Of Applied Physics, 78,, pp1948-1952.
  • MORIARTY P MURPHY B ROBERTS L CAFOLLA AA HUGHES G KOENDERS L BAILEY P WOOLF DA. 1995. CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE. Applied Physics Letters, 67,, pp383-385.
  • MORIARTY P MURPHY B ROBERTS L CAFOLLA AA HUGHES G KOENDERS L BAILEY P. 1994. PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING- MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE. Physical Review B-condensed Matter, 50,, pp14237-14245.
  • MURPHY B MORIARTY P ROBERTS L CAFOLLA T HUGHES G KOENDERS L BAILEY P. 1994. CHEMICAL AND STRUCTURAL STUDIES OF THE INTERACTIONS OF MOLECULAR SULFUR WITH THE GAAS(111)A AND GAAS(111)B SURFACES. Surface Science, 317,, pp73-83.
  • KOENDERS L MORIARTY P HUGHES G JUSKO O. 1993. VACANCY CREATION ON THE SI(111)-7X7 SURFACE DUE TO SULFUR DESORPTION STUDIED BY SCANNING-TUNNELING-MICROSCOPY. Surface Science, 297,, ppL113-L118.
  • MORIARTY P MURPHY B HUGHES G. 1993. SCANNING-TUNNELING-MICROSCOPY STUDY OF THE AMBIENT OXIDATION OF PASSIVATED GAAS(100) SURFACES. Journal Of Vacuum Science & Technology A-vacuum Surface, 11,, pp1099-1105.
  • MORIARTY P KOENDERS L HUGHES G. 1993. SULFUR-INDUCED C(4X4) RECONSTRUCTION OF THE SI(001) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY. Physical Review B-condensed Matter, 47,, pp15950-15953.
  • ETTEMA ARHF HAAS C MORIARTY P HUGHES G. 1993. WAVE-FUNCTION IMAGING OF THE PBS(001) SURFACE WITH SCANNING- TUNNELING-MICROSCOPY. Surface Science, 287,, pp1106-1111.
  • ROBERTS L HUGHES G FENNEMA B CARBERY M. 1993. A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY OF THE DEPOSITION OF TITANIUM ON AN OXIDIZED GAAS(100) SURFACE. Semiconductor Science And Technology, 8,, pp647-651.
  • FENNEMA BDJR FORSTER RJ VOS JG HUGHES G DIAMOND D. 1993. OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .2. PROCESSING THE DATA USING EXCEL. Trac-trends In Analytical Chemistry, 12,, pp37-40.
  • FENNEMA BDJR FORSTER RJ VOS JG HUGHES G DIAMOND D. 1993. OBTAINING AND PROCESSING DATA FROM LABORATORY INSTRUMENTS .1. GETTING THE DATA INTO THE WINDOWS ENVIRONMENT. Trac-trends In Analytical Chemistry, 12,, pp1-3.
  • MORIARTY P HUGHES G. 1992. AN INVESTIGATION OF THE EARLY STAGES OF NATIVE OXIDE-GROWTH ON CHEMICALLY ETCHED AND SULFUR-TREATED GAAS(100) AND INP(100) SURFACES BY SCANNING TUNNELING MICROSCOPY. Ultramicroscopy, 42,, pp956-961.
  • ROBERTS L HUGHES G FENNEMA B CARBERY M. 1992. VACUUM ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INTERACTION OF MOLECULAR SULFUR WITH THE GAAS(100) SURFACE. Journal Of Vacuum Science & Technology B, 10,, pp1862-1866.
  • FIVES K MCGOVERN IT MCGRATH R CIMINO R HUGHES G MCKINLEY A THORNTON G. 1992. THE PHOTOELECTRON BAND-STRUCTURE OF MOLYBDENUM-DISULFIDE. Journal Of Physics-condensed Matter, 4,, pp5639-5646.
  • MORIARTY P HUGHES G. 1992. ATOMIC RESOLVED MATERIAL DISPLACEMENT ON GRAPHITE SURFACES BY SCANNING TUNNELING MICROSCOPY. Applied Physics Letters, 60,, pp2338-2340.
  • ROBERTS L HUGHES G. 1991. AN INVESTIGATION OF METAL GAAS(100) INTERFACES BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Applied Surface Science, 50,, pp424-427.
  • C. Stephens, G.J. Hughes, I.T. McGovern, A.B. McClean, D.R. Zahn, R.H. Williams, W. Braun, R. Cimino, W. Wilke, H. Haak, K. Horn. 1988. Thermal effects in Aluminium-semiconductor interface formation.. Vacuum, 38,, pp329-332.
  • F. Schaeffler, W. Drube, G.J. Hughes, R. Ludeke, D. Rieger, F.J. Himpsel. 1987. Metal-induced impurity states at the InP-transition metal interfaces.. Journal Of Vacuum Science & Technology A-vacuum Surface, A5(4),, pp1528-1533.
  • F. Schaeffler, G.J. Hughes, W. Drube, R. Ludeke, F.J. Himpsel. 1987. Comparative study of Yittrium and other Transition Metals on GaAs (110).. Physical Review B-condensed Matter, 35,, pp6328-6336.
  • F. Schaeffler, R. Ludeke, A. Taleb-Ibrahimi, G.J. Hughes, D. Rieger. 1987. Sb/GaAs (110) interface: A re-evaluation.. Physical Review B-condensed Matter, B36,, pp1328-1332.
  • G. Hollinger, G.J. Hughes, F.J. Himpsel, F. Houzay, J.L. Jordan, J.F. Morar.. 1986. Early stages in the formation of the InP (110) - oxide interface. Surface Science, 168, , pp617-625.
  • G. Hollinger, J.F.Morar, F.J.Himpsel, G.J.Hughes and J.L.Jordan,. 1986. Si(111) surface oxidation- O 1s core-level study using synchrotron radiation. Surface Science, 168, 1-3, pp609-616.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley. 1986. Carbon - Is excitation studies of diamond (111)I: Surface core levels.. Physical Review B-condensed Matter, B33,, pp1340-1345.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley. 1986. Carbon - Is excitation studies of diamond (111)II: Unoccupied surface states.. Physical Review B-condensed Matter, B33,, pp1986-1991.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley.. 1986. Carbon - 1s excitation studies of diamond (111)II: Unoccupied surface states. Physical Review B-condensed Matter, B33, , pp1346-1349.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, F.R. McFeeley.. 1986. Carbon - 1s excitation studies of diamond (111) I: Surface core levels. Physical Review B-condensed Matter, B33, , pp1340-1345.
  • G.J. Hughes, R. Ludeke. 1986. Oxygen-1s studies of the oxidation of InP (110) and GaAs (110) surfaces.. Journal Of Vacuum Science & Technology A-vacuum Surface, B(4)4,, pp1109-1114.
  • G.J. Hughes, R. Ludeke, F. Schaeffler, D. Rieger. 1986. Transition metal overlayers on GaAs (110): A case for extrinsic surface states.. Journal Of Vacuum Science & Technology A-vacuum Surface, B(4)4,, pp924-930.
  • F.J. Himpsel, F.U. Hillebrecht, G.J. Hughes, J.L. Jordan, U. Karlsson, F.R. McFeeley, J.F. Morar, D. Rieger. 1986. Structure and bonding of the CaF /Si(111) interface.. Journal Of Applied Physics, 48,, pp1327-1332.
  • G.J. Hughes, R. Ludeke, J.F. Morar, J.L. Jordan. 1985. Oxygen-Is core level studies of the oxidation of GaAs (110). Journal Of Vacuum Science & Technology B, , pp1079-1080.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, G.J. Hughes, J.L. Jordan.. 1985. Observation of a core excitation in diamond (111). Physical Review Letters, 54, , pp1960-1963.
  • J.F. Morar, F.J. Himpsel, G. Hollinger, J.L. Jordan, G.J. Hughes, R.F. McFeely.. 1985. High resolution photoemission investigation; the oxidation of tungsten. Journal Of Vacuum Science & Technology B, 3, 2, pp1476-1480.
  • T.P. Humphreys, G.J. Hughes, A. McKinley, E.C. Cunningham, R.H. Williams.. 1985. The adsorption of tin layers on cleaned InP (110) surfaces. Surface Science, 152/153, , pp1222-1227.
  • R.H. Williams, A. McKinley, G.H. Hughes, C. Maani, T.P. Humphreys.. 1984. Metal contacts on semiconductors: The adsorption of Sb, Sn and Ga on InP110) cleaned surfaces. Journal Of Vacuum Science & Technology B, 2, 3, pp561-568.
  • C. Maani, A. McKinley, G.J. Hughes, R.H. Williams. 1983. The adsorption of Ga and Sb on cleaved InP surfaces. Vacuum, Vol. 33, , pp597-600.
  • G.J. Hughes, A. McKinley, R.H. Williams.. 1983. Nickel and copper on cleaned InP (110); Structure, metallurgy and electronic properties. Journal Of Physics C: Solid State Physics, 16, , pp2391-2406.
  • I.T. McGovern, J.F. McGilp, G.J. Hughes, A. McKinley, R.H. Williams, D. Norman.. 1983. Soft x-ray photoemission spectroscopy of chemical reactivity at metal- GaSe Interfaces. Vacuum, 33, , pp607-612.
  • A. McKinley, G.J. Hughes, R.H. Williams.. 1982. Aluminium overlayers on InP (110)- microscopic aspects of interface formation. Journal Of Physics C: Solid State Physics, 15, , pp7049-7063.
  • G.J. Hughes, A. McKinley, R.H. Williams, I.T. McGovern.. 1982. Metal-gallium selenide interfaces - observation of the true Schottky limit. Journal Of Physics C: Solid State Physics, 15, , pp159-164.
  • R.H.Williams, A.McKinley, G.J.Hughes, V. Montgomery and I.T.McGovern. 1982. Metal-GaSe and metal-InP interfaces Schottky Barrier formation and interface reactions. Journal Of Vacuum Science & Technology A-vacuum Surface, 21, 2, pp594-598.
  • G. Hughes, T.P. Humphreys, V. Montgomery, R.H. Williams.. 1981. The influence of adlayers on Schottky barrier formation: The adsorption of Hydrogen Sulphide and Water on InP (110) surfaces. Vacuum, 33, , pp539-541.
  • A. McKinley, A.W. Parks, G.J. Hughes, J. Fryar, R.H. Williams.. 1980. Atomically clean semiconductor surfaces prepared by laser irradiation. Journal Of Physics D-applied Physics, 13, , pp193-197.
  • , Transition metal overlayers on GaAs (110): A case for extrinsic surface states., 13th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, Pasadena, California 1986., - ,
  • , Oxygen-1s studies of the oxidation of InP (110) and GaAs(110) surfaces., 12th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces,1985., - , Tempe, Arizona
  • , , , - ,
  • , , , - ,
  • , , , - ,
  • R. Ludeke, G.J. Hughes, W. Drube, F. Schaeffler, F.J. Himpsel, D. Rieger, D. Straub, G. Landgren , An impurity model for the Schottky barrier: Transition metals on III-V compound semiconductors., Physics of Semiconductors Conference. (ICPS) 1986, - , Stockholm,
  • , An investigation of the passivating effects of hydrogen sulphide on the GaAs (100) surface, E-MRS. 1990, - ,
  • , An investigation of metal-GaAs (100) interfaces by deep level transient spectroscopy., E-MRS. 1990, - , Strasbourg
  • , Raman characterisation of passivated GaAs surfaces, E-MRS. 1990., - , Strasbourg
  • , Preliminary studies on the rate of native oxide growth on III-V semiconductor surfaces by Scanning Tunnelling Microscopy, International Conference on Scanning Tunnelling Microscopy.1991, - , Interlaken, Switzerland
  • , A vacuum ultraviolet photoelectron spectroscopy study of the interaction of molecular sulphur with the GaAs(100) surface., Annual Conference on the Physics and Chemistry of Semiconductor Interfaces. 1992., - , California, USA
  • , A scanning tunnelling microscopy study of the ambient oxidation of passivated GaAs(100) surfaces., American Vacuum Society, November 1992., - , Chicago
  • , , , - ,
  • , X-ray photoelectron spectroscopy study of the interaction of transition metal layers with the sulphur terminated InP(100) surface, International Seminar on Surface Passivation, - , Ustron, Poland
  • S.McDonnell, G.Hughes, K.Cherkaoui , P.K.Hurley , R.Dunne , S.Cosgrave , M. Tiernan, X-ray photoelectron spectroscopy study of ion assisted growth of ultrathin HfO2/Si Dielectric films., WoDiM 2006, - , Catania Sicily
  • K. Cherkaoui, P.K. Hurley, A. Negara, S. McDonnell, G. Hughes, R. Dunne, S. Cosgrave, M. Tiernan, Influence of Argon Ion Assist on the Electrical Properties of Ultra-Thin HfO2 on Si(100) Formed by Electron Beam Deposition, WoDiM 2006, - , Catania Sicily
  • Robert OConnor , Greg Hughes , Robin Degraeve , Ben Kaczer, Progressive breakdown in ultra-thin SiON dielectrics and its effect on transistor performance, WoDiM Conference June 2004, - , Kinsale Co Cork
  • Robert OConnor, Robin Degraeve, Ben Kaczer, Anabela Veloso, Greg Hughes and Guido Groeseneken., Weibull Slope and Voltage Acceleration of Ultra-thin (1.1- 1.45 nm EOT) Oxynitrides., Insulating Films on Semiconductors (INFOS 2003), - , Barcelona
  • E.AlShamaileh, G.Hughes, A.A Cafolla , Structural Study of the Cu{100}-p(2x2)-Sb Surface Alloy Using Low Energy Electron Diffraction, European Conference on Surface Science ECOSS-22, September 2003 , - , Prague
  • Ph. Guaino, D. Carty , A.A. Cafolla, G. Sheerin, O. McDonald, G.Hughes., Scanning tunneling microscopy of the C22H14/Au(110) surface., STM'03,July 2003, - , Eindhoven
  • Ph. Guaino, A.A. Cafolla, G. Sheerin, D. Carty, G.Hughes., Scanning tunneling microscopy and spectroscopy of pentacene on the Ag/Si(111)-(3 x 3)R30 surface., STM'03, - , Eindhoven
  • G.Sheerin, Ph. Guaino, D.Carty, G. Hughes, A. Cafolla., An STM study of structural and electronic properties of pentacene molecules adsorbed on the Ag/Si(111)-( x )R30 surface., Thin Films of Organic Molecules: Fundamentals and Applications, - , Birmingham
  • G. Hughes, D.Carty, O.McDonald , P.Guaino and A.A.Cafolla., Electronic and structural interactions at the pentacene - Ag/Si (111) 3 x 3 interface., Interdisciplinary Surface Science Conference (ISSC-14) , - , Liverpool University
  • O.McDonald, D.Carty, G. Hughes, P.Guaino and A.A.Cafolla, Photoemission and STM studies of the chemical and structural interactions at the Pentacene / Au(110) interface., Interdisciplinary Surface Science Conference (ISSC-14) June 2003, - , Liverpool University
  • Greg Hughes, Jason Roche, Darren Carty and Tony Cafolla Kevin E. Smith, Core Level Photoemission and Scanning Tunneling Microscopy study of the interaction of pentacene with the Si(100) surface., PCSI-29, - , Santa Fe NM USA
  • , An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge (111) and Ge (100) surfaces., Sixth International Conference on the Formation of Semiconductor Interfaces, - , Cardiff, Wales
  • , Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100) surfaces, Sixth International Conference on the Formation of Semiconductor Interfaces, - , Cardiff, Wales
  • , Chemical and structural studies of molecular sulphur adsorption on the GaAs(100) surface,, European Sceince Foundation Research Conference, Fundamental Aspects of Surface Science 1996, - , Blankenberge, Belgium
  • S.N.Ali Murad, D.W.McNeill, S.J.N.Mitchell, B.M.Armstrong, M.Modreanu, G.Hughes, and R.K.Chellappan, Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2, ISDRS-2011 , 04-DEC-11 - 07-DEC-11, Washington
  • R.K. Chellappan and G. Hughes, High resolution photoemission comparison study of interface formation between MgO and the atomically clean and selenium passivated Ge(100) surfaces., 42nd IEEE Semiconductor Interface Specialists Conference, , 01-DEC-11 - 03-DEC-11, Washington DC.
  • Lalit Chauhan and Greg Hughes, Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean n-InGaAs surface. , 42nd IEEE Semiconductor Interface Specialists Conference, , 01-DEC-11 - 03-DEC-11, Washington DC
  • Rajeshkumar Chellappan and Greg Hughes , Interface studies of high-k dielectric growth on Ge (100) surfaces, Intel European Research and Innovation Conference. , 12-OCT-11 - 14-NOV-11, Leixlip, Co.Kildare
  • L.Walsh, G.J. Hughes, B. Brennan and J.C. Woicik , HAXPES characterisation of high-k dielectric metal oxide semiconductor structures on inGaAs , 4th International HAXPES Workshop , 13-SEP-11 - 15-SEP-11, DESY, Hamburg
  • J. G. Lozano, S. Lozano-Perez, J. Bogan, Y.C. Wang, B. Brennan, P. D. Nellist and G. Hughes, (S)TEM analysis of the interdiffusion and barrier layer formation in Mn/Cu heterostructures on SiO2 for interconnect technologies, EMAG 2011 - Quantifying the Nanoworld - Electron Microscopy and Analysis Group , 06-SEP-11 - 09-SEP-11, Birmingham, UK
  • Barry Brennan, Kumar Kumarappan, Lalit Chauhan and Greg Hughes, High resolution photoemission comparison study of atomic hydrogen cleaned and decapped InGaAs substrates, 38th International Symposium on Compound Semiconductors ISCS 2011 , 22-MAY-11 - 26-MAY-11, Berlin
  • Justin Bogan, Juan G. Lozano, Barry Brennan and Greg Hughes , Interdiffusion in Cu/Mn based barrier layers for copper interconnects., 18th Interdisciplinary Surface Science Conference (ISSC-18), 04-APR-11 - 07-APR-11, Warwick University, UK
  • Justin Bogan, Patrick Casey, Juan Lozano and Greg Hughes , Manganese based Diffusion Barriers for Cu Interconnects, Intel ERIC conference, 12-OCT-10 - 14-OCT-10, Leixlip, Co Kildare
  • E OConnor, B. B. Brennan, R. Contreras, M. Milojevic, K. Cherkaoui, S. Monaghan, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley. , (NH4)2S passivation of high-k/In0.53Ga0.47As interfaces: A systematic study of (NH4)2S concentration, 218th ECS Meeting, 10-OCT-10 - 15-OCT-10, Las Vegas, Nevada
  • J.G. Lozano, J. Bogan, B. Brennan, P.D. Nellist and G. Hughes , Barrier layer formation and interdiffusion in Cu/Mn heterostructures for interconnect technologies, International Microscopy Congress 17, 19-SEP-10 - 24-SEP-10, Rio de Janeiro
  • Robert J. Young, Lorenzo O. Mereni, Nikolay Petkov, Gabrielle R. Knight, Valeria Dimastrodonato, Paul K. Hurley, Greg Hughes and Emanuele Pelucchi, The importance of low-angle misorientation on the optical properties of InGaAs/AlInAs quantum wells., 15th International Conference on Metal Organic Vapor Phase Epitaxy , 23-MAY-10 - 28-MAY-10, Lake Tahoe, Nevada, USA
  • Robert OConnor, Greg Hughes, Thomas Kauerauf, Lars-ke Ragnarsson , Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 EOT HfO2 n-MOSFETS , IEEE International Reliability Physics Symposium, 02-MAY-10 - 06-MAY-10, Anaheim, CA, USA.
  • E. O'Connor, B. Brennan, R. Contreras, M. Milojevic, K. Cherkaoui, S. Monaghan, G. Hughes, M. Pemble, R. Wallace and P. Hurley , (NH4)2S Passivation of High-k/In0.53Ga0.47As Interfaces: A Systematic Study of (NH4)2S Concentration, 217th ECS Meeting, 27-APR-10 - 30-APR-10, Vancouver, BC, Canada
  • P. Casey, G.Hughes, E. OConnor, R. Long, P. Hurley. , Formation of magnesium silicate on silicon native oxide surfaces., Materials Ireland Conference, 14-DEC-09 - 15-DEC-09, Tyndall National Institute
  • E OConnor, B. Brennan, R. Contreras, M. Milojevic, K. Cherkaoui, S. Monaghan, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley., (NH4)2S passivation of high-k/In0.53Ga0.47As interfaces: A systematic study of (NH4)2S concentration, Materials Ireland Conference, 14-DEC-09 - 15-DEC-09, Tyndall National Institute
  • E. Miranda, E. OConnor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. OConnell and P.K. Hurley , Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks, 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis , 05-OCT-09 - 09-OCT-09, Arcachon - France
  • P. Casey, G.Hughes, E. OConnor, R. Long, P. Hurley , Modifying the Characteristics of Si / High-k Interfaces, Intel European Research and Innovation Conference , 08-SEP-09 - 10-SEP-09, Intel Ireland
  • E. Miranda, E. OConnor, G. Hughes, P. Casey, K.Cherkaoui, S. Monaghan, R. Long, D. OConnell and P.K. Hurley, Post-Breakdown Conduction in Ni-FUSI gate/MgO/InP Structures, 17th IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS - IPFA , 06-JUL-09 - 10-JUL-09, Dushu Lake Higher Education Town , Suzhou,China
  • P Casey1, E OConnor, R Long, B Brennan, S Krasnikov, D OConnell, P. K. Hurley, G Hughes., Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces, Insulating Films on Semiconductors (INFOS) 2009 , 29-JUN-09 - 01-JUL-09, Cambridge University
  • E. Miranda, E. OConnor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. OConnell, P.K. Hurley. , Degradation dynamics and breakdown of MgO gate oxides, Insulating Films on Semiconductors (INFOS) 2009, 29-JUN-09 - 01-JUL-09, Cambridge University
  • D.Byrne, E. McGlynn, M.O. Henry, K. Kumar, G. Hughes , A novel, substrate independent three step process for the growth of uniform ZnO nanorod arrays, EMRS SPRING MEETING, 08-JUN-09 - 12-JUN-09, Strasbourg, France
  • E. Miranda, E. OConnor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. OConnell and P.K. Hurley., Soft Breakdown in Thin MgO Dielectric Layers , International Reliability Physics Symposium (IRPS) , 26-APR-09 - 30-APR-09, Montreal
  • Miranda, E., O'Connor, E., Hughes, G., Casey, P. Cherkaoui, K. Monaghan, S., Long, R., O'Connell, D., Hurley, P. K., Soft Breakdown in MgO Dielectric Layers , 47th Annual IEEE International Reliability Physics Symposium, , 26-APR-09 - 30-APR-09, Montreal
  • M. Milojevic, B. Brennan, F. S. Aguirre-Tostado, C. Hinkle, H. C. Kim, B. Lee, G. Hughes, E. Vogel, J. Kim, and R. M. Wallace , In-situ XPS investigation of the clean-up effect through half-cycle ALD reactions on III-V substrates., Semiconductor Interface Specialists Conference, 03-DEC-08 - 06-DEC-08, San Diego
  • C. L. Hinkle, A. M. Sonnet, E. M. Vogel, M. Milojevic, F. S. Aguirre-Tostado, J. Kim and R. M. Wallace, B. Brennan, G. J. Hughes 2008 , Surface states, interface traps, and Fermi level pinning correlation to the interface oxidation states of Ga , Semiconductor Interface Specialists Conference, 03-DEC-08 - 06-DEC-08, San Diego
  • C. L. Hinkle, A. M. Sonnet, E. M. Vogel, M. Milojevic, F. S. Aguirre-Tostado, J. Kim and R. M. Wallace, B. Brennan, G. J. Hughes , An in situ XPS half-cycle study of the surface clean up of III-V substrate oxides by ALD, International Symposium on Advanced Gate Stack Technology, 28-SEP-08 - 01-OCT-08, Austin, Texas
  • B. Brennan, G. Hughes, E. OConnor, R.Long and P. Hurley. , Characterisation of interface formation between HfO2 and the passivated InP(100) surface., 14th International Conference on Solid Films and Surfaces, 06-JUL-08 - 09-JUL-08, Trinity College, Dublin
  • P. Casey, G. Hughes, E. OConnor, R.Long and P. Hurley. Presented results of his work at the , July 2008 , Characterisation of thin MgO layers on Si(111) and InP(100) surfaces., 14th International Conference on Solid Films and Surfaces, 06-JUL-08 - 09-JUL-08, Trinity College, Dublin
  • Barry Brennan, Stephen McDonnell and Greg Hughes. , Photoemission studies of the initial interface formation of ultrathin MgO dielectric layers on Si(111) surfaces, 13th International Conference on Surface Science, 03-JUL-07 - 06-JUL-07, Stockholm
  • P. Casey, G.Hughes, E. OConnor, R. Long and P. Hurley. Presented at , Stockholm July 2007 , Growth and characterisation of thin MgO layers on Si(111) surfaces, 13th International Conference on Surface Science, 03-JUL-07 - 06-JUL-07, Stockholm
  • R. OConnor, G. Hughes, P.-A. Glans, T. Learmonth, and K.E. Smith, X -ray photoemission and x-ray absorption studies of Hf-silicate dielectric layers, 11th EMEA Academic Forum, 30-MAY-06 - 31-MAY-06, Dublin
  • I. Reid, V. Krastev, G. Hughes, Suppression of carbon depletion from carbon doped low k dielectric layers during fluorocarbon based plasma etching., 2nd Annual Intel Ireland Research Conference, 12-SEP-05 - 13-SEP-05, Ireland
  • S. McDonnell, G. Hughes , Growth and characterisation of HfO2 high-k dielectric layers on silicon substrates., 2nd Annual Intel Ireland Research Conference, 12-SEP-05 - 13-SEP-05,
  • S.McDonnell, G.Hughes, K.Cherkaoui , P.K.Hurley , R.Dunne , S.Cosgrave , M. Tiernan, X-ray photoelectron spectroscopy study of ion assisted growth of ultrathin HfO2/Si Dielectric films., 11th EMEA Academic Forum, 18-MAY-05 - 20-MAY-05, Gdansk
  • Robert OConnor , Greg Hughes , Robin Degraeve , Ben Kaczer, Electrical reliability of ultrathin HfSiON gate dielectrics for future technology nodes., 10th EMEA Academic Forum, 18-MAY-05 - 20-MAY-05, Gdansk
  • Greg Hughes, A photoemission , NEXAFS and STM study of organic molecules on a metallic surface: The case of Pentacene on Au(100)., Annual Trinity College IAMS Meeting, 17-DEC-04 - , Dublin, Ireland
  • , Photoemission, NEXAFS, and STM Studies of Molecular Nanostructures , ASTRID User Meeting, 21-OCT-04 - , Aarhus, Denmark
DCU
Address
The Helix
3U
NDP
Government
EU
Disclaimer | Privacy