Registry

Module Specifications

Current Academic Year 2012 - 2013
Please note that this information is subject to change.

Module Title	Semiconductor Devices
Module Code	EE403
School	School of Electronic Engineering
Online Module Resources
Module Teacher	Stephen Daniels
NFQ level	8	Credit Rating	5
Pre-requisite	None
Co-requisite	None
Compatibles	None
Incompatibles	None

Description

The aim of the module is to enable the student to understand the basic parameters which control the behaviour of electronic devices, such as diodes, bipolar transistors, MOSFETs and thyristors. The phenomena which occur in non-idealized devices are studied and the behaviour of real devices is examined in the light of these phenomena.

Learning Outcomes

1. Explain the main semiconductor wafer processing steps. Calculate oxide thickness, diffusion profiles, ion implantation profiles etc. Design diffused IC resistors
2. Differentiate between intrinsic and extrinsic semiconductors using concepts such as bandstructure and Fermi-Dirac statistics. Calculate minority carrier concentrations using the law of mass action.
3. Calculate diffusion and drift contributions to currents in semiconductor devices.
4. Explain Schottky, Ohmic and Neutral contacts; design such junctions and calculate the depletion region widths. Describe metal-semiconductor junction I-V characteristics
5. Analyse doping profiles using metal-semiconductor capacitance measurements. (PO1,PO2)• Explain the Deep Level Transient Spectroscopy (DLTS) technique.
6. Explain and calculate the I-V characteristics of pn junctions
7. Explain transient charge storage phenomena in pn junctions.
8. Explain the operation of bipolar junction transistors (BJT) using Ebers Moll model.
9. Design BJT base region doping profile to enhance device characteristics such as switching times
10. Describe MOSFET I-V and switching characteristics.
11. Introduce the basic operation of a solar cell device

Workload	Full-time hours per semester
*Type*	*Hours*	*Description*
Laboratory	9	No Description
Lecture	24	No Description
Independent learning time	92	No Description
Total Workload: 125

All module information is indicative and subject to change. For further information,students are advised to refer to the University's Marks and Standards and Programme Specific Regulations at: http://www.dcu.ie/registry/examinations/index.shtml

Indicative Content and Learning Activities

Review of charge flow concepts: drift, diffusion.
Review of semiconductors in equilibrium.

Semiconductors in non-equilibrium: decay of minority carriers.
PN diode: non-idealities, dynamic behaviour, switching transients.

Metal-semiconductor junctions.
solar cells.

Bipolar transistors: basic design, switching behaviour..
MOSFETs and MOS devices.

Assessment Breakdown
Continuous Assessment	20%	Examination Weight	80%

Course Work Breakdown
Type	Description	% of total	Assessment Date
Laboratory	n/a	10%	n/a

Reassessment Requirement
Resit arrangements are explained by the following categories; 1 = A resit is available for all components of the module 2 = No resit is available for 100% continuous assessment module 3 = No resit is available for the continuous assessment component
This module is category 1

Indicative Reading List

M. J. Cooke: 1990, Semiconductor devices, Prentice Hall, New York, 0138061831
Safa asap: 2006, Principles of Electronic Materials and Devices, 3, 13 9780073104645

Other Resources

None

Array

Programme or List of Programmes

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