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Professor Bhat, Bangalore, India gives talk at DCU's RINCE

Professor Barry McMullin, Director, Rince Institute, DCU, Dr Gandhiraman BDI. DCU, Professor Patrick McNally, Director of Nanomaterials and Processing at the Rince Institute, DCU, Professor Navakanta Bhat, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India, Dr. Noel Murphy, Head, School of Electronic Engineering, DCU, Dr. Stephen Daniels, Director, Energy & Design Lab at the Rince Institute.DCU.

On Monday 20 June, Professor Navakanta Bhat, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India, gave a talk to staff and researchers in DCU's Rince Institute.

Both Dr Stephen Daniels and Professor Patrick McNally welcomed Prof. Navakanta Bhat to the Nanomaterials Processing Laboratory to the Rince Institute in DCU. Prof Bhat is from a major Centre of Excellence in Nanoelectronics in India, whose core activities map directly onto a number at DCU. The funding for the visit was awarded jointly to Dr Gandhiraman (BDI) and Professor BHat through the India-Ireland co-operative science programme.

Professor McNally said, "We are very excited that much of their core research activities map directly onto research already carried out in DCU. This includes next generation nanodevices for low power and energy efficient computing, and advanced technologies for packaging next generation microchips for applications such as medical devices, mobile phones and tablet computing. Over the period of his visit we will be building on established student and research exchanges and consolidating joint research between DCU and the Indian Institute of Science in Bangalore".

Professor Bhat's talk, 'An Overview of Research in Nanodevices and Sensors Lab', presented the genesis of the Centre for Nano Science and Engineering (CeNSE) at the Indian Institute of Science (IISc), Bangalore. "This is a unique centre in India, which was established to create devices, technologies and societal applications by harnessing the potentials of nanotechnology. With a state of the art 14,000 sft National Nanofabrication Centre and 7,000 sft Micro and Nano Systems Characterization facility, we are uniquely positioned to carry out research, development and prototyping", he said.

He went on to present his research accomplishments in high-k gate dielectrics, schottky junctions on Germanium and Graphene transistor modeling and experiments, and gave a summary of his team's research in the area of gas sensors, bio sensors and inertial sensors.