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Patrick McNally

Prof

Contact Details


S357

T: Ext. 5119
E: Patrick.McNally@dcu.ie
Full Professor of Electronic Engineering

S357
School of Electronic Engineering
Dublin City University
Dublin 9
IRELAND

T: +35317005119
F: +35317005508
M: +353862490713
E: patrick.mcnally@dcu.ie
W: http://www.eeng.dcu.ie/npl/

Biography

Prof. Patrick McNally served as Head of the School of Electronic Engineering in DCU (2012-2015) and is currently Co-Director of the Nanomaterials Processing Laboratory (NPL) in DCU and is a Principal Investigator in of DCU's Advanced Processing Technology Research Centre (APT) and a Principal Investigator in Ireland's National Centre for Plasmsa Science and Technology (NCPST). He is  also a Funded Investigator in Science Foundation Ireland's Advanced Manufacturing Research Centre (I-Form). He is Deputy Editor-in-Chief (Responsibility for Research Integrity, including all Comments, Replies, and Complaints) of Journal of Materials Science: Materials in Electronics, which is published by Springer Nature. He is a member of the International Advisory Committee for the series of International Conferences on Optical and Optoelectronic Properties of Materials and Applications (ICOOPMA). 

He was a member of the Scientific Advisory Committee for the ANKA-ISS Synchrotron, Karlsruhe and was a member of the X-Ray Topography Workgroup for construction of the ANKA Synchrotron Beamline, Karlsruhe, Germany. Prof. McNally has authored and co-authored more than 300 scientific peer-reviewed papers in international journals and conference proceedings. He is and was Principal Researcher for numerous Science Foundation Ireland, Enterprise Ireland, EU FP6 and FP7 research programmes (e.g. ENGAGE, SmartPM, SIDAM).  He is a world leader in the field of advanced x-ray diffraction imaging technology, non-destructive radio frequency metrology for plasma processing (Radio Emission Spectroscopy) and  copper halide materials and device development. Prof. McNally holds significant IP in the area of radio emission spectroscopy and photoacoustics metrology and the photoacoustics technology was spun out of DCU leading to the establishment (2010) of a new SME, Sonex Metrology Ltd. (of which he was a founding Director, and formerly its CTO). 

Book Chapters

  Year Publication
2012 'Raman Spectroscopy and its Application in the Characterization of Semiconductor Devices'
McNally P. (2012) 'Raman Spectroscopy and its Application in the Characterization of Semiconductor Devices' In: Nanomaterials: Processing and Characterization with Lasers. [DOI] [Details]

Peer Reviewed Journals

  Year Publication
2016 'Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching'
Cowley, A;Steele, JA;Byrne, D;Vijayaraghavan, RK;McNally, PJ (2016) 'Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching'. RSC Advances, 6 :30468-30473 [DOI] [Details]
2016 'Reduction of the impact of atmospheric ageing effects on spin coated gamma-CuCl nanocrystalline hybrid films'
Alam, MM;Daniels, S;McNally, PJ (2016) 'Reduction of the impact of atmospheric ageing effects on spin coated gamma-CuCl nanocrystalline hybrid films'. Optical Materials, 51 :5-8 [DOI] [Details]
2016 'Simultaneous depth-profiling of electrical and elemental properties of ion-implanted arsenic in silicon by combining secondary-ion mass spectrometry with resistivity measurements'
Bennett N.;Wong C.;McNally P. (2016) 'Simultaneous depth-profiling of electrical and elemental properties of ion-implanted arsenic in silicon by combining secondary-ion mass spectrometry with resistivity measurements'. Review of Scientific Instruments, 87 (7) [DOI] [Details]
2016 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'
Vijayaraghavan, RK;Gaman, C;Jose, B;Mccoy, AP;Cafolla, T;McNally, PJ;Daniels, S (2016) 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'. ACS applied materials & interfaces, 8 :4878-4886 [DOI] [Details]
2016 'Reduction of the impact of atmospheric ageing effects on spin coated γ-CuCl nanocrystalline hybrid films'
Alam M.;Daniels S.;McNally P. (2016) 'Reduction of the impact of atmospheric ageing effects on spin coated γ-CuCl nanocrystalline hybrid films'. Optical Materials, 51 :5-8 [DOI] [Details]
2016 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'
Cowley, A;Ivankovic, A;Wong, CS;Bennett, NS;Danilewsky, AN;Gonzalez, M;Cherman, V;Vandevelde, B;De Wolf, I;McNally, PJ (2016) 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'. Microelectronics and Reliability, 59 :108-116 [DOI] [Details]
2016 'Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages'
Bose A.;Vijayaraghavan R.;Cowley A.;Cherman V.;Varela Pedreira O.;Tanner B.;Danilewsky A.;De Wolf I.;McNally P. (2016) 'Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages'. IEEE Transactions on Components, Packaging and Manufacturing Technology, 6 (4):653-662 [DOI] [Details]
2016 'X-ray asterism and the structure of cracks from indentations in silicon'
Tanner B.;Garagorri J.;Gorostegui-Colinas E.;Elizalde M.;Allen D.;McNally P.;Wittge J.;Ehlers C.;Danilewsky A. (2016) 'X-ray asterism and the structure of cracks from indentations in silicon'. Journal of Applied Crystallography, 49 :250-259 [DOI] [Details]
2016 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'
Vijayaraghavan R.;Gaman C.;Jose B.;McCoy A.;Cafolla T.;McNally P.;Daniels S. (2016) 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'. ACS applied materials & interfaces, 8 (7):4878-4886 [DOI] [Details]
2015 'Interaction of SF6 and O2 plasma with porous poly phenyl methyl silsesquioxane low-κ films'
Cherunilam J.;Rajani K.;Byrne C.;Heise A.;McNally P.;Daniels S. (2015) 'Interaction of SF6 and O2 plasma with porous poly phenyl methyl silsesquioxane low-κ films'. Journal of Physics D - Applied Physics, 48 (12) [DOI] [Details]
2015 'Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging'
Li Z.;Danilewsky A.;Helfen L.;Mikulik P.;Haenschke D.;Wittge J.;Allen D.;McNally P.;Baumbach T. (2015) 'Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging'. Journal of Synchrotron Radiation, 22 :1083-1090 [DOI] [Details]
2015 'Synchrotron white-beam X-ray topography analysis of the defect structure of HVPE-GaN substrates'
Kirste L.;Danilewsky A.;Sochacki T.;Köhler K.;Zajac M.;Kucharski R.;Bóckowski M.;McNally P. (2015) 'Synchrotron white-beam X-ray topography analysis of the defect structure of HVPE-GaN substrates'. ECS Journal of Solid State Science and Technology, 4 (8):P324-P330 [DOI] [Details]
2015 'The geometry of catastrophic fracture during high temperature processing of silicon'
Tanner B.;Garagorri J.;Gorostegui-Colinas E.;Elizalde M.;Bytheway R.;McNally P.;Danilewsky A. (2015) 'The geometry of catastrophic fracture during high temperature processing of silicon'. International Journal of Fracture, 195 (1-2):79-85 [DOI] [Details]
2015 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'
Cowley A.;Ivankovic A.;Wong C.;Bennett N.;Danilewsky A.;Gonzalez M.;Cherman V.;Vandevelde B.;De Wolf I.;McNally P. (2015) 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'. Microelectronics and Reliability, [DOI] [Details]
2014 'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs'
Bennett N.;Cherkaoui K.;Wong C.;O'Connor ;Monaghan S.;Hurley P.;Chauhan L.;McNally P. (2014) 'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs'. Thin Solid Films, 569 (C):104-112 [DOI] [Details]
2014 'Influence of substrate metal alloy type on the properties of hydroxyapatite coatings deposited using a novel ambient temperature deposition technique'
Barry J.;Cowley A.;McNally P.;Dowling D. (2014) 'Influence of substrate metal alloy type on the properties of hydroxyapatite coatings deposited using a novel ambient temperature deposition technique'. Journal of Biomedical Materials Research - Part A, 102 (3):871-879 [DOI] [Details]
2014 'Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages'
Wong C.;Bennett N.;Manessis D.;Danilewsky A.;McNally P. (2014) 'Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages'. Microelectronic Engineering, 117 :48-56 [DOI] [Details]
2014 'Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films'
Alam M.;Olabanji Lucas F.;Danieluk D.;Bradley A.;Daniels S.;McNally P. (2014) 'Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films'. Thin Solid Films, 564 :104-109 [DOI] [Details]
2014 'Influence of oxygen plasma on the growth, structure, morphology, and electro-optical properties of p-type transparent conducting CuBr thin films'
Vijayaraghavan R.;McCoy A.;Chauhan L.;Cowley A.;Morris R.;Daniels S.;McNally P. (2014) 'Influence of oxygen plasma on the growth, structure, morphology, and electro-optical properties of p-type transparent conducting CuBr thin films'. Journal of Physical Chemistry C, 118 (40):23226-23232 [DOI] [Details]
2013 'Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell'
Rajani K.;Daniels S.;Rahman M.;Cowley A.;McNally P. (2013) 'Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell'. Materials Letters, 111 :63-66 [DOI] [Details]
2013 'Dellafossite CuAlO2 film growth and conversion to Cu-Al2O3 metal ceramic composite via control of annealing atmospheres'
Byrne, D;Cowley, A;McNally, P;McGlynn, E (2013) 'Dellafossite CuAlO2 film growth and conversion to Cu-Al2O3 metal ceramic composite via control of annealing atmospheres'. CrystEngComm, 15 :6144-6150 [DOI] [Details]
2013 'Crack propagation and fracture in silicon wafers under thermal stress'
Danilewsky A.;Wittge J.;Kiefl K.;Allen D.;McNally P.;Garagorri J.;Elizalde M.;Baumbach T.;Tanner B. (2013) 'Crack propagation and fracture in silicon wafers under thermal stress'. Journal of Applied Crystallography, 46 (4):849-855 [DOI] [Details]
2013 'Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques'
Barry J.;Twomey B.;Cowley A.;O'Neill L.;McNally P.;Dowling D. (2013) 'Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques'. Surface and Coatings Technology, 226 :82-91 [DOI] [Details]
2013 'Laser machined macro and micro structures on glass for enhanced light trapping in solar cells'
Moore D.;Rahman M.;Dowling D.;McNally P.;Brabazon D. (2013) 'Laser machined macro and micro structures on glass for enhanced light trapping in solar cells'. Applied Physics A: Materials Science and Processing, 110 (3):661-665 [DOI] [Details]
2013 'Soft x-ray spectroscopic investigation of Zn doped CuCl produced by pulsed dc magnetron sputtering'
Rajani K.;Daniels S.;McNally P.;Krishnamurthy S. (2013) 'Soft x-ray spectroscopic investigation of Zn doped CuCl produced by pulsed dc magnetron sputtering'. Journal of Physics Condensed Matter, 25 (28) [DOI] [Details]
2012 'Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper'
Rajani K.;Daniels S.;McGlynn E.;Gandhiraman R.;Groarke R.;McNally P. (2012) 'Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper'. Materials Letters, 71 :160-163 [DOI] [Details]
2012 'Study of exciton-polariton modes in nanocrystalline thin films of CuCl using reflectance spectroscopy'
Foy B.;McGlynn E.;Cowley A.;McNally P.;Henry M. (2012) 'Study of exciton-polariton modes in nanocrystalline thin films of CuCl using reflectance spectroscopy'. Journal of Applied Physics, 112 (3) [DOI] [Details]
2012 'Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field'
Corr S.;Raoof M.;MacKeyev Y.;Phounsavath S.;Cheney M.;Cisneros B.;Shur M.;Gozin M.;McNally P.;Wilson L.;Curley S. (2012) 'Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field'. Journal of Physical Chemistry C, 116 (45):24380-24389 [DOI] [Details]
2012 'Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques'
Wong C.;Bennett N.;Galiana B.;Tejedor P.;Benedicto M.;Molina-Aldareguia J.;McNally P. (2012) 'Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques'. Semiconductor Science and Technology, 27 (11) [DOI] [Details]
2012 'Citrate-Capped Gold Nanoparticle Electrophoretic Heat Production in Response to a Time-Varying Radio-Frequency Electric Field'
Corr, SJ;Raoof, M;Mackeyev, Y;Phounsavath, S;Cheney, MA;Cisneros, BT;Shur, M;Gozin, M;McNally, PJ;Wilson, LJ;Curley, SA (2012) 'Citrate-Capped Gold Nanoparticle Electrophoretic Heat Production in Response to a Time-Varying Radio-Frequency Electric Field'. Journal of Physical Chemistry C, 116 :24380-24389 [DOI] [Details]
2012 'Prediction of the propagation probability of individual cracks in brittle single crystal materials'
Tanner B.;Fossati M.;Garagorri J.;Elizalde M.;Allen D.;McNally P.;Jacques D.;Wittge J.;Danilewsky A. (2012) 'Prediction of the propagation probability of individual cracks in brittle single crystal materials'. Applied Physics Letters, 101 (4) [DOI] [Details]
2011 'Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties'
Rajani K.;Olabanji Lucas F.;Daniels S.;Danieluk D.;Bradley A.;Cowley A.;Alam M.;McNally P. (2011) 'Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties'. Thin Solid Films, 519 (18):6064-6068 [DOI] [Details]
2011 'CuBr blue light emitting electroluminescent thin film devices'
Lucas F.;Cowley A.;Daniels S.;Mcnally P. (2011) 'CuBr blue light emitting electroluminescent thin film devices'. Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (9):2919-2922 [DOI] [Details]
2011 'Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon'
Allen D.;Wittge J.;Stopford J.;Danilewsky A.;McNally P. (2011) 'Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon'. Journal of Applied Crystallography, 44 (3):526-531 [DOI] [Details]
2011 'Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments'
Danilewsky A.;Wittge J.;Hess A.;Cröll A.;Rack A.;Allen D.;McNally P.;Dos Santos Rolo T.;Vagovič P.;Baumbach T.;Garagorri J.;Elizalde M.;Tanner B. (2011) 'Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments'. Physica Status Solidi (A) Applications and Materials, 208 (11):2499-2504 [DOI] [Details]
2011 'Evaluation of conduction mechanism and electronic parameters for Au/organic-inorganic CuCl hybrid film/ITO structures'
Alam M.;Cowley A.;Rajani K.;Daniels S.;McNally P. (2011) 'Evaluation of conduction mechanism and electronic parameters for Au/organic-inorganic CuCl hybrid film/ITO structures'. Semiconductor Science and Technology, 26 (9) [DOI] [Details]
2011 'Characteristics of silicon nanocrystals for photovoltaic applications'
Moore D.;Krishnamurthy S.;Chao Y.;Wang Q.;Brabazon D.;McNally P. (2011) 'Characteristics of silicon nanocrystals for photovoltaic applications'. Physica Status Solidi (A) Applications and Materials, 208 (3):604-607 [DOI] [Details]
2011 'Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers'
Stopford J.;Allen D.;Aldrian O.;Morshed M.;Wittge J.;Danilewsky A.;McNally P. (2011) 'Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers'. Microelectronic Engineering, 88 (1):64-71 [DOI] [Details]
2011 'Thermal slip sources at the extremity and bevel edge of silicon wafers'
Tanner B.;Wittge J.;Allen D.;Fossati M.;Danilwesky A.;McNally P.;Garagorri J.;Elizalde M.;Jacques D. (2011) 'Thermal slip sources at the extremity and bevel edge of silicon wafers'. Journal of Applied Crystallography, 44 (3):489-494 [DOI] [Details]
2011 'Poly(vinylpyrrolidone)-stabilized silver nanoparticles for strained-silicon surface enhanced Raman spectroscopy'
Corr S.;O'Reilly L.;Dillon E.;Barron A.;McNally P. (2011) 'Poly(vinylpyrrolidone)-stabilized silver nanoparticles for strained-silicon surface enhanced Raman spectroscopy'. Journal of Raman Spectroscopy, 42 (12):2085-2088 [DOI] [Details]
2011 'Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation'
Byun K.;Fleming P.;Bennett N.;Gity F.;McNally P.;Morris M.;Ferain I.;Colinge C. (2011) 'Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation'. Journal of Applied Physics, 109 (12) [DOI] [Details]
2010 'Characterization of the carrot defect in 4H-SiC epitaxial layers'
Hassan J.;Henry A.;McNally P.;Bergman J. (2010) 'Characterization of the carrot defect in 4H-SiC epitaxial layers'. Journal of Crystal Growth, 312 (11):1828-1837 [DOI] [Details]
2010 'X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers'
Wittge J.;Danilewsky A.;Allen D.;McNally P.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Garagorri J.;Elizalde M.;Jacques D.;Fossati M.;Bowen D.;Tanner B. (2010) 'X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers'. Powder Diffraction, 25 (2):99-103 [DOI] [Details]
2010 'Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography'
Danilewsky A.;Wittge J.;Hess A.;Cröll A.;Allen D.;McNally P.;Vagovič P.;Cecilia A.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Elizalde M. (2010) 'Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (3-4):399-402 [DOI] [Details]
2010 'Electroluminescence of γ-CuBr thin films via vacuum evaporation depositon'
Cowley A.;Lucas F.;Gudimenko E.;Alam M.;Danieluk D.;Bradley A.;McNally P. (2010) 'Electroluminescence of γ-CuBr thin films via vacuum evaporation depositon'. Journal of Physics D - Applied Physics, 43 (16) [DOI] [Details]
2010 'Ultrathin chromium transparent metal contacts by pulsed dc magnetron sputtering'
Rajani K.;Daniels S.;McNally P.;Lucas F.;Alam M. (2010) 'Ultrathin chromium transparent metal contacts by pulsed dc magnetron sputtering'. Physica Status Solidi (A) Applications and Materials, 207 (7):1586-1589 [DOI] [Details]
2010 'Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography'
Allen D.;Wittge J.;Zlotos A.;Gorostegui-Colinas E.;Garagorri J.;McNally P.;Danilewsky A.;Elizalde M. (2010) 'Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (3-4):383-387 [DOI] [Details]
2010 'Dislocation sources and slip band nucleation from indents on silicon wafers'
Wittge J.;Danilewsky A.;Allen D.;McNally P.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Garagorri J.;Elizalde M.;Jacques D.;Fossati M.;Bowen D.;Tanner B. (2010) 'Dislocation sources and slip band nucleation from indents on silicon wafers'. Journal of Applied Crystallography, 43 (5 PART 1):1036-1039 [DOI] [Details]
2009 'Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge'
Lankinen, A;Knuuttila, L;Kostamo, P;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L (2009) 'Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge'. Journal of Crystal Growth, 311 :4619-4627 [DOI] [Details]
2009 'Hybrid organic-inorganic spin-on-glass CuCl films for optoelectronic applications'
Alam, MM;Lucas, FO;Danieluk, D;Bradley, AL;Rajani, KV;Daniels, S;McNally, PJ (2009) 'Hybrid organic-inorganic spin-on-glass CuCl films for optoelectronic applications'. Journal of Physics D - Applied Physics, 42 [DOI] [Details]
2009 'UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques'
Cowley A.;Foy B.;Danilieuk D.;McNally P.;Bradley A.;McGlynn E.;Danilewsky A. (2009) 'UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques'. Physica Status Solidi (A) Applications and Materials, 206 (5):923-926 [DOI] [Details]
2009 'Dislocations and dislocation reduction in space grown GaSb'
Danilewsky, AN;Croll, A;Tonn, J;Schweizer, M;Lauer, S;Benz, KW;Tuomi, T;Rantamaki, R;McNally, P;Curley, J (2009) 'Dislocations and dislocation reduction in space grown GaSb'. Crystal Research and Technology, 44 :1109-1114 [DOI] [Details]
2009 'Structural, optical and electrical properties of Co-evaporated CuCl/KCl films'
Lucas F.;McNally P.;Cowley A.;Daniels S.;Bradley L.;Danieluk D.;Taylor D. (2009) 'Structural, optical and electrical properties of Co-evaporated CuCl/KCl films'. Physica Status Solidi (C) Current Topics in Solid State Physics, 6 (SUPPL. 1):S114-S118 [DOI] [Details]
2008 'White beam topography of 300 mm Si wafers'
Danilewsky A.;Wittge J.;Rack A.;Weitkamp T.;Simon R.;Baumbach T.;McNally P. (2008) 'White beam topography of 300 mm Si wafers'. Journal of Materials Science: Materials in Electronics, 19 (SUPPL. 1):S269-S272 [DOI] [Details]
2008 'Optical properties of CuCl films on silicon substrates'
Mitra, A;O'Reilly, L;Lucas, OF;Natarajan, G;Danieluk, D;Bradley, AL;McNally, PJ;Daniels, S;Cameron, DC;Reader, A;Martinz-Rosas, M (2008) 'Optical properties of CuCl films on silicon substrates'. Physica Status Solidi (B): Basic Research, 245 :2808-2814 [DOI] [Details]
2008 'Temperature dependent optical properties of UV emitting γ-CuCl thin films'
Natarajan G.;Mitra A.;Daniels S.;Cameron D.;McNally P. (2008) 'Temperature dependent optical properties of UV emitting γ-CuCl thin films'. Thin Solid Films, 516 (7):1439-1442 [DOI] [Details]
2008 'Influence of target to substrate distance on the sputtered CuCl film properties'
Natarajan G.;Daniels S.;Cameron D.;McNally P. (2008) 'Influence of target to substrate distance on the sputtered CuCl film properties'. Thin Solid Films, 516 (16):5531-5535 [DOI] [Details]
2008 'Constraints on micro-Raman strain metrology for highly doped strained Si materials'
O'Reilly, L;Horan, K;McNally, PJ;Bennett, NS;Cowern, NEB;Lankinen, A;Sealy, BJ;Gwilliam, RM;Noakes, TCQ;Bailey, P (2008) 'Constraints on micro-Raman strain metrology for highly doped strained Si materials'. Applied Physics Letters, 92 [DOI] [Details]
2008 'X-ray excited optical luminescence of Mg-doped GaN'
Lankinen, A;Svensk, O;Mattila, M;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L;Paulmann, C (2008) 'X-ray excited optical luminescence of Mg-doped GaN'. Journal of X-Ray Science and Technology, 16 :215-220 [Details]
2008 'Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire'
Grabowska, J;Kumar, RTR;McGlynn, E;Nanda, KK;Newcomb, SB;McNally, PJ;O'Reilly, L;Mosnier, JP;Henry, MO (2008) 'Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire'. Thin Solid Films, 516 :1725-1735 [DOI] [Details]
2008 'Raman scattering studies of ultrashallow Sb implants in strained Si'
O'Reilly, L;Bennett, NS;McNally, PJ;Sealy, BJ;Cowern, NEB;Lankinen, A;Tuomi, TO (2008) 'Raman scattering studies of ultrashallow Sb implants in strained Si'. Journal of Materials Science: Materials in Electronics, 19 :305-309 [DOI] [Details]
2008 'Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?'
Bennett N.;Smith A.;Gwilliam R.;Webb R.;Sealy B.;Cowern N.;O'Reilly L.;McNally P. (2008) 'Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1):391-395 [DOI] [Details]
2007 'Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization'
Chen, WM;McCloskey, P;Rohan, JF;Byrne, P;McNally, PJ (2007) 'Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization'. IEEE Transactions on Components and Packaging Technologies, 30 :144-151 [DOI] [Details]
2007 'Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain'
Xu, L;Lowney, D;McNally, PJ;Borowiec, A;Lankinen, A;Tuomi, TO;Danilewsky, AN (2007) 'Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain'. Semiconductor Science and Technology, 22 :970-979 [DOI] [Details]
2007 'Evaluation of the chemical, electronic and optoelectronic properties of gamma-CuCl thin films and their fabrication on Si substrates'
Lucas, FO;Mitra, A;McNally, PJ;Daniels, S;Bradley, AL;Taylor, DM;Proskuryakov, YY;Durose, K;Cameron, DC (2007) 'Evaluation of the chemical, electronic and optoelectronic properties of gamma-CuCl thin films and their fabrication on Si substrates'. Journal of Physics D - Applied Physics, 40 :3461-3467 [DOI] [Details]
2007 'Self-organized ZnAl2O4 nanostructures grown on c-sapphire'
Grabowska J.;Nanda K.;Rajendra Kumar R.;Mosnier J.;Henry M.;Newcomb S.;McNally P.;O'Reilly L.;Lu X.;McGlynn E. (2007) 'Self-organized ZnAl2O4 nanostructures grown on c-sapphire'. Superlattices and Microstructures, 42 (1-6):327-332 [DOI] [Details]
2007 'Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates'
Lucas F.;Mitra A.;McNally P.;Daniels S.;Bradley A.;Taylor D.;Proskuryakov Y.;Durose K.;Cameron D. (2007) 'Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates'. Journal of Physics D - Applied Physics, 40 (11):3461-3467 [DOI] [Details]
2006 'The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography'
Noonana, D;McNally, PJ;Chen, WM;Lankinen, A;Knuuttila, L;Tuomi, TO;Danilewsky, AN;Simon, R (2006) 'The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography'. Microelectronics, 37 :1372-1378 [DOI] [Details]
2006 'Highly conductive Sb-doped layers in strained Si'
Bennett, NS;Cowern, NEB;Smith, AJ;Gwilliam, RM;Sealy, BJ;O'Reilly, L;McNally, PJ;Cooke, G;Kheyrandish, H (2006) 'Highly conductive Sb-doped layers in strained Si'. Applied Physics Letters, 89 [DOI] [Details]
2006 'Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties'
Natarajan, G;Kumar, RTR;Daniels, S;Cameron, DC;McNally, PJ (2006) 'Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties'. Journal of Applied Physics, 100 [DOI] [Details]
2006 'Crystal defects and strain of epitaxial InP layers laterally overgrown on Si'
Lankinen, A;Tuomi, T;Karilahti, M;Zytkiewicz, ZR;Domagala, JZ;McNally, PJ;Sun, YT;Olsson, F;Lourdudoss, S (2006) 'Crystal defects and strain of epitaxial InP layers laterally overgrown on Si'. Crystal Growth and Design, 6 :1096-1100 [DOI] [Details]
2006 'Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications'
Natarajan, G;Daniels, S;Cameron, DC;O'Reilly, L;Mitra, A;McNally, PJ;Lucas, OF;Kumar, RTR;Reid, I;Bradley, AL (2006) 'Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications'. Journal of Applied Physics, 100 [DOI] [Details]
2005 'Room-temperature ultraviolet luminescence from gamma-CuCl grown on near lattice-matched silicon'
O'Reilly, L;Lucas, OF;McNally, PJ;Reader, A;Natarajan, G;Daniels, S;Cameron, DC;Mitra, A;Martinez-Rosas, M;Bradley, AL (2005) 'Room-temperature ultraviolet luminescence from gamma-CuCl grown on near lattice-matched silicon'. Journal of Applied Physics, 98 [DOI] [Details]
2005 'Low temperature growth GaAs on Ge'
Knuuttila, L;Lankinen, A;Likonen, J;Lipsanen, H;Lu, X;McNally, P;Riikonen, J;Tuomi, T (2005) 'Low temperature growth GaAs on Ge'. Japanese Journal of Applied Physics, 44 :7777-7784 [DOI] [Details]
2005 'Synchrotron X-ray topographic study of dislocations and stacking faults in InAs'
Lankinen, A;Tuomi, T;Riikonen, J;Knuuttila, L;Lipsanen, H;Sopanen, M;Danilewsky, A;McNally, PJ;O'Reilly, L;Zhilyaev, Y;Fedorov, L;Sipila, H;Vaijarvi, S;Simon, R;Lumb, D;Owens, A (2005) 'Synchrotron X-ray topographic study of dislocations and stacking faults in InAs'. Journal of Crystal Growth, 283 :320-327 [DOI] [Details]
2005 'Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy'
Ryan, BJ;Lowney, DP;Henry, MO;McNally, PJ;McGlynn, E;Jacobs, K;Considine, L (2005) 'Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy'. Thin Solid Films, 473 :308-314 [DOI] [Details]
2004 'Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology'
McNally, PJ;Kanatharana, J;Toh, BHW;McNeill, DW;Danilewsky, AN;Tuomi, T;Knuuttila, L;Riikonen, J;Toivonen, J;Simon, R (2004) 'Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology'. Journal of Applied Physics, 96 :7596-7602 [DOI] [Details]
2004 'Comparison of induced stresses due to electroless versus sputtered copper interconnect technology'
McNally, PJ;Kanatharana, J;Toh, BHW;McNeill, DW;Tuomi, T;Danilewsky, AN;Knuuttila, L;Riikonen, J;Toivonen, J (2004) 'Comparison of induced stresses due to electroless versus sputtered copper interconnect technology'. Semiconductor Science and Technology, 19 :1280-1284 [DOI] [Details]
2003 'Evaluation of mechanical stresses in silicon substrates due to lead-tin solder bumps via synchrotron X-ray topography and finite element modeling'
Kanatharana, J;Perez-Camacho, JJ;Buckley, T;McNally, PJ;Tuomi, T;Danilewsky, AN;O'Hare, M;Lowney, D;Chen, W;Rantamaki, R;Knuuttila, L;Riikonen, J (2003) 'Evaluation of mechanical stresses in silicon substrates due to lead-tin solder bumps via synchrotron X-ray topography and finite element modeling'. Microelectronic Engineering, 65 :209-221 [Details]
2003 'Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements'
Karilahti, M;Tuomi, T;McNally, PJ (2003) 'Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements'. Semiconductor Science and Technology, 18 :45-55 [Details]
2003 'Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography'
Chen, WM;McNally, PJ;Shvyd'ko, YV;Tuomi, T;Danilewsky, AN;Lerche, M (2003) 'Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography'. Journal of Crystal Growth, 252 :113-119 [DOI] [Details]
2003 'Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring'
Dewan, MNA;McNally, PJ;Perova, T;Herbert, PAF (2003) 'Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring'. Microelectronic Engineering, 65 :25-46 [Details]
2002 'Plasma modeling for a nonsymmetric capacitive discharge driven by a nonsinusoidal radio frequency current'
Dewan, MNA;McNally, PJ;Herbert, PAF (2002) 'Plasma modeling for a nonsymmetric capacitive discharge driven by a nonsinusoidal radio frequency current'. Journal of Applied Physics, 91 :5604-5613 [DOI] [Details]
2002 'Examination of mechanical stresses in silicon substrates due to lead-tin solder bumps via micro-Raman spectroscopy and finite element modelling'
Kanatharana, J;Perez-Camacho, JJ;Buckley, T;McNally, PJ;Tuomi, T;Riikonen, J;Danilewsky, AN;O'Hare, M;Lowney, D;Chen, W;Rantamaki, R;Knuuttila, L (2002) 'Examination of mechanical stresses in silicon substrates due to lead-tin solder bumps via micro-Raman spectroscopy and finite element modelling'. Semiconductor Science and Technology, 17 :1255-1260 [Details]
2002 'Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography'
Lowney, D;Perova, TS;Nolan, M;McNally, PJ;Moore, RA;Gamble, HS;Tuomi, T;Rantamaki, R;Danilewsky, AN (2002) 'Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography'. Semiconductor Science and Technology, 17 :1081-1089 [Details]
2002 'Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs'
Islam, MS;Huda, MQ;Alam, AHMZ;McNally, PJ (2002) 'Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs'. Microelectronic Engineering, 60 :457-467 [Details]
2002 'Determination of crystal misorientation in epitaxial lateral overgrowth of GaN'
Chen, WM;McNally, PJ;Jacobs, K;Tuomi, T;Danilewsky, AN;Zytkiewicz, ZR;Lowney, D;Kanatharana, J;Knuuttila, L;Riikonen, J (2002) 'Determination of crystal misorientation in epitaxial lateral overgrowth of GaN'. Journal of Crystal Growth, 243 :94-102 [Details]
2001 'Compact DC model for submicron GaAs MESFETs including gate-source modulation effects'
McNally, PJ;Daniels, B (2001) 'Compact DC model for submicron GaAs MESFETs including gate-source modulation effects'. Microelectronics, 32 :249-251 [Details]
2001 'Use of plasma impedance monitoring for the determination of SF6 reactive ion etch process end points in a SiO2/Si system'
Dewan, MNA;McNally, PJ;Perova, T;Herbert, PAF (2001) 'Use of plasma impedance monitoring for the determination of SF6 reactive ion etch process end points in a SiO2/Si system'. Materials Research Innovations, 5 :107-116 [Details]
2001 'Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography'
McNally, PJ;Tuomi, T;Lowney, D;Jacobs, K;Danilewsky, AN;Rantamaki, R;O'Hare, M;Considine, L (2001) 'Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography'. Physica Status Solidi (A) Applied Research, 185 :373-382 [Details]
2001 'Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts for the fabrication of GaAs MESFETs'
Islam, MS;McNally, PJ (2001) 'Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts for the fabrication of GaAs MESFETs'. IEEE Transactions on Electron Devices, 48 :823-825 [Details]
2001 'Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography'
McNally, PJ;Rantamaki, R;Tuomi, T;Danilewsky, AN;Lowney, D;Curley, JW;Herbert, PAF (2001) 'Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography'. IEEE Transactions on Components and Packaging Technologies, 24 :76-83 [Details]
2001 'Quality assessment of sapphire wafers for X-ray crystal optics using white beam Synchrotron X-Ray Topography'
Chen, WM;McNally, PJ;Shvydko, YV;Tuomi, T;Lerche, M;Danilewsky, AN;Kanatharana, J;Lowney, D;O'Hare, M;Knuuttila, L;Riikonen, J;Rantamaki, R (2001) 'Quality assessment of sapphire wafers for X-ray crystal optics using white beam Synchrotron X-Ray Topography'. Physica Status Solidi (A) Applied Research, 186 :365-371 [Details]
2000 'On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure'
McNally, PJ;Dilliway, G;Bonar, JM;Willoughby, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;Lowney, D (2000) 'On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure'. Applied Physics Letters, 77 :1644-1646 [Details]
2000 'Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFETs: Technology and performance'
Islam, MS;McNally, PJ;Alam, AHMZ;Huda, MQ (2000) 'Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFETs: Technology and performance'. Solid-State Electronics, 44 :655-661 [Details]
2000 'Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography'
McNally, PJ;Dilliway, G;Bonar, JM;Willoughby, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;Lowney, D (2000) 'Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography'. Physica Status Solidi (A) Applied Research, 180 :1-3 [Details]
1999 'The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography'
McNally, PJ;Danilewsky, AN;Curley, JW;Reader, A;Rantamaki, R;Tuomi, T;Bolt, M;Taskinen, M (1999) 'The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography'. Microelectronic Engineering, 45 :47-56 [Details]
1999 'Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers'
Rantamaki, R;Tuomi, T;Zytkiewicz, ZR;Domagala, J;McNally, PJ;Danilewsky, AN (1999) 'Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers'. Journal of Applied Physics, 86 :4298-4303 [Details]
1999 'Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy'
Mcnally, PJ;Curley, JW;Bolt, M;Reader, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;DeWolf, I (1999) 'Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy'. Journal of Materials Science: Materials in Electronics, 10 :351-358 [Details]
1998 'A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs'
Islam, MS;McNally, PJ (1998) 'A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs'. Microelectronic Engineering, 40 :35-42 [Details]
1998 'An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography'
McNally, PJ;Curley, J;Krier, A;Mao, Y;Richardson, J;Tuomi, T;Taskinen, M;Rantamaki, R;Prieur, E;Danilewsky, A (1998) 'An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography'. Semiconductor Science and Technology, 13 :345-349 [Details]
1998 'A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior'
Baric, A;McNally, PJ (1998) 'A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior'. IEEE Transactions on Education, 41 :219-223 [Details]
1998 'Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs'
Islam, MS;McNally, PJ (1998) 'Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs'. Thin Solid Films, 320 :253-259 [Details]
1998 'Effects of metallization thickness on the thermal and long-term stability of Pd/Sn Ohmic contacts to n-GaAs'
Islam, MS;McNally, PJ (1998) 'Effects of metallization thickness on the thermal and long-term stability of Pd/Sn Ohmic contacts to n-GaAs'. Physica Status Solidi (A) Applied Research, 165 :417-426 [Details]
1997 'The importance of the Pd to Sn ratio and of annealing cycles on the performance of Pd/Sn ohmic contacts to n-GaAs'
Islam, MS;McNally, PJ;Cameron, DC;Herbert, PAF (1997) 'The importance of the Pd to Sn ratio and of annealing cycles on the performance of Pd/Sn ohmic contacts to n-GaAs'. Thin Solid Films, 292 :264-269 [Details]
1996 'Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's'
McNally, PJ;Tuomi, T;Herbert, PAF;Baric, A;Ayras, P;Karilahti, M;Lipsanen, H;Tromby, M (1996) 'Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's'. IEEE Transactions on Electron Devices, 43 :1085-1091 [Details]
1996 'Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes'
McNally, PJ;Herbert, PAF;Tuomi, T;Karilahti, M;Higgins, JA (1996) 'Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes'. Journal of Applied Physics, 79 :8294-8297 [Details]
1995 'Piezoelectrically-active defects and their impact on the performance of GaAs MESFETs'
McNally, PJ;McCaffrey, JK;Baric, A (1995) 'Piezoelectrically-active defects and their impact on the performance of GaAs MESFETs'. Journal Of Materials Processing Technology, 55 :303-310 [Details]
1993 'MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS'
MCNALLY, PJ;ROSENBERG, JJ;JACKSON, TN;RAMIREZ, JC (1993) 'MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS'. Solid-State Electronics, 36 :1597-1612 [Details]
1992 'THE USE OF GENERALIZED MODELS TO EXPLAIN THE BEHAVIOR OF OHMIC CONTACTS TO N-TYPE GAAS'
MCNALLY, PJ (1992) 'THE USE OF GENERALIZED MODELS TO EXPLAIN THE BEHAVIOR OF OHMIC CONTACTS TO N-TYPE GAAS'. Solid-State Electronics, 35 :1705-1708 [Details]

Editorial

  Year Publication
2013 TECHNIQUES 3D imaging of crystal defects.
McNally, PJ (2013) TECHNIQUES 3D imaging of crystal defects. LONDON: Editorial [Details]
2008 Special Issue: Papers from the 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006).
McNally, P (2008) Special Issue: Papers from the 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006). DORDRECHT: Editorial [DOI] [Details]
2008 Editorial.
McNally P. (2008) Editorial. Editorial [DOI] [Details]

Note

  Year Publication
2013 Techniques: 3D imaging of crystal defects.
McNally P. (2013) Techniques: 3D imaging of crystal defects. Note [DOI] [Details]

Enterprise Engagement

  Year Engagement Type Organisation Description

2000-2018		 Equipment use/Access to Infrastructure ANKA Synchrotron X-ray diffraction imaging experimentation

2008-2018		 Equipment use/Access to Infrastructure Diamond Light Source (UK) X-ray diffraction imaging experimentation

Research Interests

  • Radio Emission Spectroscopy techniques
  • Advanced x-ray diffraction imaging technology.
  • Copper halide materials and device development.

External Collaborators

  Name Organisation / Institute Country
Prof. Brian Tanner Durham University UNITED KINGDOM
Dr Andreas Danilewsky Freiburg Univesity GERMANY

Modules Coordinated

  Term (ID)) Title Link Subject
2021 Solid State Electr. & Semiconductor Devices EE463Solid State Electr. & Semiconductor Devices
2021 Nanoelectronics Technology EE559Nanoelectronics Technology