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Patrick McNally

PROF

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Patrick McNally, BE, ScM, PhD, CEng, CPhys, FIEI, FInstP, SMIEEE, is Full Professor in the School of Electronic Engineering at Dublin City University (DCU), served as Head of the School of Electronic Engineering in DCU (2012-2015) and is currently Co-Director of the Nanomaterials Processing Laboratory (www.eeng.dcu.ie/npl) in DCU, Principal Investigator in the National Centre for Plasma Research & Technology (www.dcu.ie/ncpst), and a Funded Investigatorin Science Foundation Ireland’s I-Form Research Centre (www.i-form.ie). He has extensive interest in developing technologies from low TRL levels through to commercialisation. In 2010, he was Founding Director and CTO of Sonex Metrology Ltd, a company dedicated to non-destructive silicon wafer metrology, and was the developer of Radio Emission Spectroscopy, which is currently licensed to a Major Multinational Corporation. This technology is currently operational in at major semiconductor manufacturing fabs worldwide. He holds 9 patents in plasma and metrology technologies, and has published more than 300 journal articles and conference proceedings. He is a world leader in the field of Radio Emission Spectroscopy for plasma processing, advanced x-ray diffraction imaging technology, and non-destructive nanomaterials characterisation (including micro-Raman and photoacoustic spectroscopy techniques). 

  

Book Chapter

Year Publication
2012 McNally P. (2012) 'Raman Spectroscopy and its Application in the Characterization of Semiconductor Devices' In: Nanomaterials: Processing and Characterization with Lasers. [DOI]

Peer Reviewed Journal

Year Publication
2016 Cowley, A;Steele, JA;Byrne, D;Vijayaraghavan, RK;McNally, PJ (2016) 'Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching'. RSC Advances, 6 :30468-30473. [DOI]
2016 Alam, MM;Daniels, S;McNally, PJ (2016) 'Reduction of the impact of atmospheric ageing effects on spin coated gamma-CuCl nanocrystalline hybrid films'. Optical Materials, 51 :5-8. [DOI]
2016 Bennett N.;Wong C.;McNally P. (2016) 'Simultaneous depth-profiling of electrical and elemental properties of ion-implanted arsenic in silicon by combining secondary-ion mass spectrometry with resistivity measurements'. Review of Scientific Instruments, 87 (7). [DOI]
2016 Vijayaraghavan, RK;Gaman, C;Jose, B;Mccoy, AP;Cafolla, T;McNally, PJ;Daniels, S (2016) 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'. ACS applied materials & interfaces, 8 :4878-4886. [DOI]
2016 Alam M.;Daniels S.;McNally P. (2016) 'Reduction of the impact of atmospheric ageing effects on spin coated γ-CuCl nanocrystalline hybrid films'. Optical Materials, 51 :5-8. [DOI]
2016 Cowley, A;Ivankovic, A;Wong, CS;Bennett, NS;Danilewsky, AN;Gonzalez, M;Cherman, V;Vandevelde, B;De Wolf, I;McNally, PJ (2016) 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'. Microelectronics and Reliability, 59 :108-116. [DOI]
2016 Bose A.;Vijayaraghavan R.;Cowley A.;Cherman V.;Varela Pedreira O.;Tanner B.;Danilewsky A.;De Wolf I.;McNally P. (2016) 'Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages'. IEEE Transactions on Components, Packaging and Manufacturing Technology, 6 (4):653-662. [DOI]
2016 Tanner B.;Garagorri J.;Gorostegui-Colinas E.;Elizalde M.;Allen D.;McNally P.;Wittge J.;Ehlers C.;Danilewsky A. (2016) 'X-ray asterism and the structure of cracks from indentations in silicon'. Journal of Applied Crystallography, 49 :250-259. [DOI]
2016 Vijayaraghavan R.;Gaman C.;Jose B.;McCoy A.;Cafolla T.;McNally P.;Daniels S. (2016) 'Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications'. ACS applied materials & interfaces, 8 (7):4878-4886. [DOI]
2015 Cherunilam J.;Rajani K.;Byrne C.;Heise A.;McNally P.;Daniels S. (2015) 'Interaction of SF6 and O2 plasma with porous poly phenyl methyl silsesquioxane low-κ films'. Journal of Physics D - Applied Physics, 48 (12). [DOI]
2015 Li Z.;Danilewsky A.;Helfen L.;Mikulik P.;Haenschke D.;Wittge J.;Allen D.;McNally P.;Baumbach T. (2015) 'Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging'. Journal of Synchrotron Radiation, 22 :1083-1090. [DOI]
2015 Kirste L.;Danilewsky A.;Sochacki T.;Köhler K.;Zajac M.;Kucharski R.;Bóckowski M.;McNally P. (2015) 'Synchrotron white-beam X-ray topography analysis of the defect structure of HVPE-GaN substrates'. ECS Journal of Solid State Science and Technology, 4 (8):P324-P330. [DOI]
2015 Tanner B.;Garagorri J.;Gorostegui-Colinas E.;Elizalde M.;Bytheway R.;McNally P.;Danilewsky A. (2015) 'The geometry of catastrophic fracture during high temperature processing of silicon'. International Journal of Fracture, 195 (1-2):79-85. [DOI]
2015 Cowley A.;Ivankovic A.;Wong C.;Bennett N.;Danilewsky A.;Gonzalez M.;Cherman V.;Vandevelde B.;De Wolf I.;McNally P. (2015) 'B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages'. Microelectronics and Reliability, . [DOI]
2014 Bennett N.;Cherkaoui K.;Wong C.;O'Connor ;Monaghan S.;Hurley P.;Chauhan L.;McNally P. (2014) 'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs'. Thin Solid Films, 569 (C):104-112. [DOI]
2014 Barry J.;Cowley A.;McNally P.;Dowling D. (2014) 'Influence of substrate metal alloy type on the properties of hydroxyapatite coatings deposited using a novel ambient temperature deposition technique'. Journal of Biomedical Materials Research - Part A, 102 (3):871-879. [DOI]
2014 Wong C.;Bennett N.;Manessis D.;Danilewsky A.;McNally P. (2014) 'Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages'. Microelectronic Engineering, 117 :48-56. [DOI]
2014 Alam M.;Olabanji Lucas F.;Danieluk D.;Bradley A.;Daniels S.;McNally P. (2014) 'Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films'. Thin Solid Films, 564 :104-109. [DOI]
2014 Vijayaraghavan R.;McCoy A.;Chauhan L.;Cowley A.;Morris R.;Daniels S.;McNally P. (2014) 'Influence of oxygen plasma on the growth, structure, morphology, and electro-optical properties of p-type transparent conducting CuBr thin films'. Journal of Physical Chemistry C, 118 (40):23226-23232. [DOI]
2013 Rajani K.;Daniels S.;Rahman M.;Cowley A.;McNally P. (2013) 'Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell'. Materials Letters, 111 :63-66. [DOI]
2013 Byrne, D;Cowley, A;McNally, P;McGlynn, E (2013) 'Dellafossite CuAlO2 film growth and conversion to Cu-Al2O3 metal ceramic composite via control of annealing atmospheres'. CrystEngComm, 15 :6144-6150. [DOI]
2013 Danilewsky A.;Wittge J.;Kiefl K.;Allen D.;McNally P.;Garagorri J.;Elizalde M.;Baumbach T.;Tanner B. (2013) 'Crack propagation and fracture in silicon wafers under thermal stress'. Journal of Applied Crystallography, 46 (4):849-855. [DOI]
2013 Barry J.;Twomey B.;Cowley A.;O'Neill L.;McNally P.;Dowling D. (2013) 'Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques'. Surface and Coatings Technology, 226 :82-91. [DOI]
2013 Moore D.;Rahman M.;Dowling D.;McNally P.;Brabazon D. (2013) 'Laser machined macro and micro structures on glass for enhanced light trapping in solar cells'. Applied Physics A: Materials Science and Processing, 110 (3):661-665. [DOI]
2013 Rajani K.;Daniels S.;McNally P.;Krishnamurthy S. (2013) 'Soft x-ray spectroscopic investigation of Zn doped CuCl produced by pulsed dc magnetron sputtering'. Journal of Physics Condensed Matter, 25 (28). [DOI]
2012 Rajani K.;Daniels S.;McGlynn E.;Gandhiraman R.;Groarke R.;McNally P. (2012) 'Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper'. Materials Letters, 71 :160-163. [DOI]
2012 Foy B.;McGlynn E.;Cowley A.;McNally P.;Henry M. (2012) 'Study of exciton-polariton modes in nanocrystalline thin films of CuCl using reflectance spectroscopy'. Journal of Applied Physics, 112 (3). [DOI]
2012 Corr S.;Raoof M.;MacKeyev Y.;Phounsavath S.;Cheney M.;Cisneros B.;Shur M.;Gozin M.;McNally P.;Wilson L.;Curley S. (2012) 'Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field'. Journal of Physical Chemistry C, 116 (45):24380-24389. [DOI]
2012 Wong C.;Bennett N.;Galiana B.;Tejedor P.;Benedicto M.;Molina-Aldareguia J.;McNally P. (2012) 'Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques'. Semiconductor Science and Technology, 27 (11). [DOI]
2012 Corr, SJ;Raoof, M;Mackeyev, Y;Phounsavath, S;Cheney, MA;Cisneros, BT;Shur, M;Gozin, M;McNally, PJ;Wilson, LJ;Curley, SA (2012) 'Citrate-Capped Gold Nanoparticle Electrophoretic Heat Production in Response to a Time-Varying Radio-Frequency Electric Field'. Journal of Physical Chemistry C, 116 :24380-24389. [DOI]
2012 Tanner B.;Fossati M.;Garagorri J.;Elizalde M.;Allen D.;McNally P.;Jacques D.;Wittge J.;Danilewsky A. (2012) 'Prediction of the propagation probability of individual cracks in brittle single crystal materials'. Applied Physics Letters, 101 (4). [DOI]
2011 Rajani K.;Olabanji Lucas F.;Daniels S.;Danieluk D.;Bradley A.;Cowley A.;Alam M.;McNally P. (2011) 'Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties'. Thin Solid Films, 519 (18):6064-6068. [DOI]
2011 Lucas F.;Cowley A.;Daniels S.;Mcnally P. (2011) 'CuBr blue light emitting electroluminescent thin film devices'. Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (9):2919-2922. [DOI]
2011 Allen D.;Wittge J.;Stopford J.;Danilewsky A.;McNally P. (2011) 'Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon'. Journal of Applied Crystallography, 44 (3):526-531. [DOI]
2011 Danilewsky A.;Wittge J.;Hess A.;Cröll A.;Rack A.;Allen D.;McNally P.;Dos Santos Rolo T.;Vagovič P.;Baumbach T.;Garagorri J.;Elizalde M.;Tanner B. (2011) 'Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments'. Physica Status Solidi (A) Applications and Materials, 208 (11):2499-2504. [DOI]
2011 Alam M.;Cowley A.;Rajani K.;Daniels S.;McNally P. (2011) 'Evaluation of conduction mechanism and electronic parameters for Au/organic-inorganic CuCl hybrid film/ITO structures'. Semiconductor Science and Technology, 26 (9). [DOI]
2011 Moore D.;Krishnamurthy S.;Chao Y.;Wang Q.;Brabazon D.;McNally P. (2011) 'Characteristics of silicon nanocrystals for photovoltaic applications'. Physica Status Solidi (A) Applications and Materials, 208 (3):604-607. [DOI]
2011 Stopford J.;Allen D.;Aldrian O.;Morshed M.;Wittge J.;Danilewsky A.;McNally P. (2011) 'Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers'. Microelectronic Engineering, 88 (1):64-71. [DOI]
2011 Tanner B.;Wittge J.;Allen D.;Fossati M.;Danilwesky A.;McNally P.;Garagorri J.;Elizalde M.;Jacques D. (2011) 'Thermal slip sources at the extremity and bevel edge of silicon wafers'. Journal of Applied Crystallography, 44 (3):489-494. [DOI]
2011 Corr S.;O'Reilly L.;Dillon E.;Barron A.;McNally P. (2011) 'Poly(vinylpyrrolidone)-stabilized silver nanoparticles for strained-silicon surface enhanced Raman spectroscopy'. Journal of Raman Spectroscopy, 42 (12):2085-2088. [DOI]
2011 Byun K.;Fleming P.;Bennett N.;Gity F.;McNally P.;Morris M.;Ferain I.;Colinge C. (2011) 'Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation'. Journal of Applied Physics, 109 (12). [DOI]
2010 Hassan J.;Henry A.;McNally P.;Bergman J. (2010) 'Characterization of the carrot defect in 4H-SiC epitaxial layers'. Journal of Crystal Growth, 312 (11):1828-1837. [DOI]
2010 Wittge J.;Danilewsky A.;Allen D.;McNally P.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Garagorri J.;Elizalde M.;Jacques D.;Fossati M.;Bowen D.;Tanner B. (2010) 'X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers'. Powder Diffraction, 25 (2):99-103. [DOI]
2010 Danilewsky A.;Wittge J.;Hess A.;Cröll A.;Allen D.;McNally P.;Vagovič P.;Cecilia A.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Elizalde M. (2010) 'Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (3-4):399-402. [DOI]
2010 Cowley A.;Lucas F.;Gudimenko E.;Alam M.;Danieluk D.;Bradley A.;McNally P. (2010) 'Electroluminescence of γ-CuBr thin films via vacuum evaporation depositon'. Journal of Physics D - Applied Physics, 43 (16). [DOI]
2010 Rajani K.;Daniels S.;McNally P.;Lucas F.;Alam M. (2010) 'Ultrathin chromium transparent metal contacts by pulsed dc magnetron sputtering'. Physica Status Solidi (A) Applications and Materials, 207 (7):1586-1589. [DOI]
2010 Allen D.;Wittge J.;Zlotos A.;Gorostegui-Colinas E.;Garagorri J.;McNally P.;Danilewsky A.;Elizalde M. (2010) 'Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (3-4):383-387. [DOI]
2010 Wittge J.;Danilewsky A.;Allen D.;McNally P.;Li Z.;Baumbach T.;Gorostegui-Colinas E.;Garagorri J.;Elizalde M.;Jacques D.;Fossati M.;Bowen D.;Tanner B. (2010) 'Dislocation sources and slip band nucleation from indents on silicon wafers'. Journal of Applied Crystallography, 43 (5 PART 1):1036-1039. [DOI]
2009 Lankinen, A;Knuuttila, L;Kostamo, P;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L (2009) 'Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge'. Journal of Crystal Growth, 311 :4619-4627. [DOI]
2009 Alam, MM;Lucas, FO;Danieluk, D;Bradley, AL;Rajani, KV;Daniels, S;McNally, PJ (2009) 'Hybrid organic-inorganic spin-on-glass CuCl films for optoelectronic applications'. Journal of Physics D - Applied Physics, 42 . [DOI]
2009 Cowley A.;Foy B.;Danilieuk D.;McNally P.;Bradley A.;McGlynn E.;Danilewsky A. (2009) 'UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques'. Physica Status Solidi (A) Applications and Materials, 206 (5):923-926. [DOI]
2009 Danilewsky, AN;Croll, A;Tonn, J;Schweizer, M;Lauer, S;Benz, KW;Tuomi, T;Rantamaki, R;McNally, P;Curley, J (2009) 'Dislocations and dislocation reduction in space grown GaSb'. Crystal Research and Technology, 44 :1109-1114. [DOI]
2009 Lucas F.;McNally P.;Cowley A.;Daniels S.;Bradley L.;Danieluk D.;Taylor D. (2009) 'Structural, optical and electrical properties of Co-evaporated CuCl/KCl films'. Physica Status Solidi (C) Current Topics in Solid State Physics, 6 (SUPPL. 1):S114-S118. [DOI]
2008 Danilewsky A.;Wittge J.;Rack A.;Weitkamp T.;Simon R.;Baumbach T.;McNally P. (2008) 'White beam topography of 300 mm Si wafers'. Journal of Materials Science: Materials in Electronics, 19 (SUPPL. 1):S269-S272. [DOI]
2008 Mitra, A;O'Reilly, L;Lucas, OF;Natarajan, G;Danieluk, D;Bradley, AL;McNally, PJ;Daniels, S;Cameron, DC;Reader, A;Martinz-Rosas, M (2008) 'Optical properties of CuCl films on silicon substrates'. Physica Status Solidi (B): Basic Research, 245 :2808-2814. [DOI]
2008 Natarajan G.;Mitra A.;Daniels S.;Cameron D.;McNally P. (2008) 'Temperature dependent optical properties of UV emitting γ-CuCl thin films'. Thin Solid Films, 516 (7):1439-1442. [DOI]
2008 Natarajan G.;Daniels S.;Cameron D.;McNally P. (2008) 'Influence of target to substrate distance on the sputtered CuCl film properties'. Thin Solid Films, 516 (16):5531-5535. [DOI]
2008 O'Reilly, L;Horan, K;McNally, PJ;Bennett, NS;Cowern, NEB;Lankinen, A;Sealy, BJ;Gwilliam, RM;Noakes, TCQ;Bailey, P (2008) 'Constraints on micro-Raman strain metrology for highly doped strained Si materials'. Applied Physics Letters, 92 . [DOI]
2008 Lankinen, A;Svensk, O;Mattila, M;Tuomi, TO;Lipsanen, H;McNally, PJ;O'Reilly, L;Paulmann, C (2008) 'X-ray excited optical luminescence of Mg-doped GaN'. Journal of X-Ray Science and Technology, 16 :215-220.
2008 Grabowska, J;Kumar, RTR;McGlynn, E;Nanda, KK;Newcomb, SB;McNally, PJ;O'Reilly, L;Mosnier, JP;Henry, MO (2008) 'Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire'. Thin Solid Films, 516 :1725-1735. [DOI]
2008 O'Reilly, L;Bennett, NS;McNally, PJ;Sealy, BJ;Cowern, NEB;Lankinen, A;Tuomi, TO (2008) 'Raman scattering studies of ultrashallow Sb implants in strained Si'. Journal of Materials Science: Materials in Electronics, 19 :305-309. [DOI]
2008 Bennett N.;Smith A.;Gwilliam R.;Webb R.;Sealy B.;Cowern N.;O'Reilly L.;McNally P. (2008) 'Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1):391-395. [DOI]
2007 Chen, WM;McCloskey, P;Rohan, JF;Byrne, P;McNally, PJ (2007) 'Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization'. IEEE Transactions on Components and Packaging Technologies, 30 :144-151. [DOI]
2007 Xu, L;Lowney, D;McNally, PJ;Borowiec, A;Lankinen, A;Tuomi, TO;Danilewsky, AN (2007) 'Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain'. Semiconductor Science and Technology, 22 :970-979. [DOI]
2007 Lucas, FO;Mitra, A;McNally, PJ;Daniels, S;Bradley, AL;Taylor, DM;Proskuryakov, YY;Durose, K;Cameron, DC (2007) 'Evaluation of the chemical, electronic and optoelectronic properties of gamma-CuCl thin films and their fabrication on Si substrates'. Journal of Physics D - Applied Physics, 40 :3461-3467. [DOI]
2007 Grabowska J.;Nanda K.;Rajendra Kumar R.;Mosnier J.;Henry M.;Newcomb S.;McNally P.;O'Reilly L.;Lu X.;McGlynn E. (2007) 'Self-organized ZnAl2O4 nanostructures grown on c-sapphire'. Superlattices and Microstructures, 42 (1-6):327-332. [DOI]
2007 Lucas F.;Mitra A.;McNally P.;Daniels S.;Bradley A.;Taylor D.;Proskuryakov Y.;Durose K.;Cameron D. (2007) 'Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates'. Journal of Physics D - Applied Physics, 40 (11):3461-3467. [DOI]
2006 Noonana, D;McNally, PJ;Chen, WM;Lankinen, A;Knuuttila, L;Tuomi, TO;Danilewsky, AN;Simon, R (2006) 'The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography'. Microelectronics, 37 :1372-1378. [DOI]
2006 Bennett, NS;Cowern, NEB;Smith, AJ;Gwilliam, RM;Sealy, BJ;O'Reilly, L;McNally, PJ;Cooke, G;Kheyrandish, H (2006) 'Highly conductive Sb-doped layers in strained Si'. Applied Physics Letters, 89 . [DOI]
2006 Natarajan, G;Kumar, RTR;Daniels, S;Cameron, DC;McNally, PJ (2006) 'Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties'. Journal of Applied Physics, 100 . [DOI]
2006 Lankinen, A;Tuomi, T;Karilahti, M;Zytkiewicz, ZR;Domagala, JZ;McNally, PJ;Sun, YT;Olsson, F;Lourdudoss, S (2006) 'Crystal defects and strain of epitaxial InP layers laterally overgrown on Si'. Crystal Growth and Design, 6 :1096-1100. [DOI]
2006 Natarajan, G;Daniels, S;Cameron, DC;O'Reilly, L;Mitra, A;McNally, PJ;Lucas, OF;Kumar, RTR;Reid, I;Bradley, AL (2006) 'Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications'. Journal of Applied Physics, 100 . [DOI]
2005 O'Reilly, L;Lucas, OF;McNally, PJ;Reader, A;Natarajan, G;Daniels, S;Cameron, DC;Mitra, A;Martinez-Rosas, M;Bradley, AL (2005) 'Room-temperature ultraviolet luminescence from gamma-CuCl grown on near lattice-matched silicon'. Journal of Applied Physics, 98 . [DOI]
2005 Knuuttila, L;Lankinen, A;Likonen, J;Lipsanen, H;Lu, X;McNally, P;Riikonen, J;Tuomi, T (2005) 'Low temperature growth GaAs on Ge'. Japanese Journal of Applied Physics, 44 :7777-7784. [DOI]
2005 Lankinen, A;Tuomi, T;Riikonen, J;Knuuttila, L;Lipsanen, H;Sopanen, M;Danilewsky, A;McNally, PJ;O'Reilly, L;Zhilyaev, Y;Fedorov, L;Sipila, H;Vaijarvi, S;Simon, R;Lumb, D;Owens, A (2005) 'Synchrotron X-ray topographic study of dislocations and stacking faults in InAs'. Journal of Crystal Growth, 283 :320-327. [DOI]
2005 Ryan, BJ;Lowney, DP;Henry, MO;McNally, PJ;McGlynn, E;Jacobs, K;Considine, L (2005) 'Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy'. Thin Solid Films, 473 :308-314. [DOI]
2004 McNally, PJ;Kanatharana, J;Toh, BHW;McNeill, DW;Danilewsky, AN;Tuomi, T;Knuuttila, L;Riikonen, J;Toivonen, J;Simon, R (2004) 'Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology'. Journal of Applied Physics, 96 :7596-7602. [DOI]
2004 McNally, PJ;Kanatharana, J;Toh, BHW;McNeill, DW;Tuomi, T;Danilewsky, AN;Knuuttila, L;Riikonen, J;Toivonen, J (2004) 'Comparison of induced stresses due to electroless versus sputtered copper interconnect technology'. Semiconductor Science and Technology, 19 :1280-1284. [DOI]
2003 Kanatharana, J;Perez-Camacho, JJ;Buckley, T;McNally, PJ;Tuomi, T;Danilewsky, AN;O'Hare, M;Lowney, D;Chen, W;Rantamaki, R;Knuuttila, L;Riikonen, J (2003) 'Evaluation of mechanical stresses in silicon substrates due to lead-tin solder bumps via synchrotron X-ray topography and finite element modeling'. Microelectronic Engineering, 65 :209-221.
2003 Karilahti, M;Tuomi, T;McNally, PJ (2003) 'Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements'. Semiconductor Science and Technology, 18 :45-55.
2003 Chen, WM;McNally, PJ;Shvyd'ko, YV;Tuomi, T;Danilewsky, AN;Lerche, M (2003) 'Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography'. Journal of Crystal Growth, 252 :113-119. [DOI]
2003 Dewan, MNA;McNally, PJ;Perova, T;Herbert, PAF (2003) 'Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring'. Microelectronic Engineering, 65 :25-46.
2002 Dewan, MNA;McNally, PJ;Herbert, PAF (2002) 'Plasma modeling for a nonsymmetric capacitive discharge driven by a nonsinusoidal radio frequency current'. Journal of Applied Physics, 91 :5604-5613. [DOI]
2002 Kanatharana, J;Perez-Camacho, JJ;Buckley, T;McNally, PJ;Tuomi, T;Riikonen, J;Danilewsky, AN;O'Hare, M;Lowney, D;Chen, W;Rantamaki, R;Knuuttila, L (2002) 'Examination of mechanical stresses in silicon substrates due to lead-tin solder bumps via micro-Raman spectroscopy and finite element modelling'. Semiconductor Science and Technology, 17 :1255-1260.
2002 Lowney, D;Perova, TS;Nolan, M;McNally, PJ;Moore, RA;Gamble, HS;Tuomi, T;Rantamaki, R;Danilewsky, AN (2002) 'Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography'. Semiconductor Science and Technology, 17 :1081-1089.
2002 Islam, MS;Huda, MQ;Alam, AHMZ;McNally, PJ (2002) 'Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs'. Microelectronic Engineering, 60 :457-467.
2002 Chen, WM;McNally, PJ;Jacobs, K;Tuomi, T;Danilewsky, AN;Zytkiewicz, ZR;Lowney, D;Kanatharana, J;Knuuttila, L;Riikonen, J (2002) 'Determination of crystal misorientation in epitaxial lateral overgrowth of GaN'. Journal of Crystal Growth, 243 :94-102.
2001 McNally, PJ;Daniels, B (2001) 'Compact DC model for submicron GaAs MESFETs including gate-source modulation effects'. Microelectronics, 32 :249-251.
2001 Dewan, MNA;McNally, PJ;Perova, T;Herbert, PAF (2001) 'Use of plasma impedance monitoring for the determination of SF6 reactive ion etch process end points in a SiO2/Si system'. Materials Research Innovations, 5 :107-116.
2001 McNally, PJ;Tuomi, T;Lowney, D;Jacobs, K;Danilewsky, AN;Rantamaki, R;O'Hare, M;Considine, L (2001) 'Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography'. Physica Status Solidi (A) Applied Research, 185 :373-382.
2001 Islam, MS;McNally, PJ (2001) 'Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts for the fabrication of GaAs MESFETs'. IEEE Transactions on Electron Devices, 48 :823-825.
2001 McNally, PJ;Rantamaki, R;Tuomi, T;Danilewsky, AN;Lowney, D;Curley, JW;Herbert, PAF (2001) 'Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam x-ray topography'. IEEE Transactions on Components and Packaging Technologies, 24 :76-83.
2001 Chen, WM;McNally, PJ;Shvydko, YV;Tuomi, T;Lerche, M;Danilewsky, AN;Kanatharana, J;Lowney, D;O'Hare, M;Knuuttila, L;Riikonen, J;Rantamaki, R (2001) 'Quality assessment of sapphire wafers for X-ray crystal optics using white beam Synchrotron X-Ray Topography'. Physica Status Solidi (A) Applied Research, 186 :365-371.
2000 McNally, PJ;Dilliway, G;Bonar, JM;Willoughby, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;Lowney, D (2000) 'On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure'. Applied Physics Letters, 77 :1644-1646.
2000 Islam, MS;McNally, PJ;Alam, AHMZ;Huda, MQ (2000) 'Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFETs: Technology and performance'. Solid-State Electronics, 44 :655-661.
2000 McNally, PJ;Dilliway, G;Bonar, JM;Willoughby, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;Lowney, D (2000) 'Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography'. Physica Status Solidi (A) Applied Research, 180 :1-3.
1999 McNally, PJ;Danilewsky, AN;Curley, JW;Reader, A;Rantamaki, R;Tuomi, T;Bolt, M;Taskinen, M (1999) 'The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography'. Microelectronic Engineering, 45 :47-56.
1999 Rantamaki, R;Tuomi, T;Zytkiewicz, ZR;Domagala, J;McNally, PJ;Danilewsky, AN (1999) 'Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers'. Journal of Applied Physics, 86 :4298-4303.
1999 Mcnally, PJ;Curley, JW;Bolt, M;Reader, A;Tuomi, T;Rantamaki, R;Danilewsky, AN;DeWolf, I (1999) 'Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy'. Journal of Materials Science: Materials in Electronics, 10 :351-358.
1998 Islam, MS;McNally, PJ (1998) 'A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs'. Microelectronic Engineering, 40 :35-42.
1998 McNally, PJ;Curley, J;Krier, A;Mao, Y;Richardson, J;Tuomi, T;Taskinen, M;Rantamaki, R;Prieur, E;Danilewsky, A (1998) 'An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography'. Semiconductor Science and Technology, 13 :345-349.
1998 Baric, A;McNally, PJ (1998) 'A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior'. IEEE Transactions on Education, 41 :219-223.
1998 Islam, MS;McNally, PJ (1998) 'Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs'. Thin Solid Films, 320 :253-259.
1998 Islam, MS;McNally, PJ (1998) 'Effects of metallization thickness on the thermal and long-term stability of Pd/Sn Ohmic contacts to n-GaAs'. Physica Status Solidi (A) Applied Research, 165 :417-426.
1997 Islam, MS;McNally, PJ;Cameron, DC;Herbert, PAF (1997) 'The importance of the Pd to Sn ratio and of annealing cycles on the performance of Pd/Sn ohmic contacts to n-GaAs'. Thin Solid Films, 292 :264-269.
1996 McNally, PJ;Tuomi, T;Herbert, PAF;Baric, A;Ayras, P;Karilahti, M;Lipsanen, H;Tromby, M (1996) 'Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMT's'. IEEE Transactions on Electron Devices, 43 :1085-1091.
1996 McNally, PJ;Herbert, PAF;Tuomi, T;Karilahti, M;Higgins, JA (1996) 'Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes'. Journal of Applied Physics, 79 :8294-8297.
1995 McNally, PJ;McCaffrey, JK;Baric, A (1995) 'Piezoelectrically-active defects and their impact on the performance of GaAs MESFETs'. Journal Of Materials Processing Technology, 55 :303-310.
1993 MCNALLY, PJ;ROSENBERG, JJ;JACKSON, TN;RAMIREZ, JC (1993) 'MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS'. Solid-State Electronics, 36 :1597-1612.
1992 MCNALLY, PJ (1992) 'THE USE OF GENERALIZED MODELS TO EXPLAIN THE BEHAVIOR OF OHMIC CONTACTS TO N-TYPE GAAS'. Solid-State Electronics, 35 :1705-1708.

Editorial

Year Publication
2013 McNally, PJ (2013) TECHNIQUES 3D imaging of crystal defects. LONDON: ED
2008 McNally, P (2008) Special Issue: Papers from the 6th International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006). DORDRECHT: ED [DOI]
2008 McNally P. (2008) Editorial. ED [DOI]

Note

Year Publication
2013 McNally P. (2013) Techniques: 3D imaging of crystal defects. NOTE [DOI]
Certain data included herein are derived from the © Web of Science (2023) of Clarivate. All rights reserved.

Enterprise Engagement

Year Engagement Type Client Description
2000-2018 Equipment use/Access to Infrastructure ANKA Synchrotron X-ray diffraction imaging experimentation
2008-2018 Equipment use/Access to Infrastructure Diamond Light Source (UK) X-ray diffraction imaging experimentation

Research Interests

  • Radio Emission Spectroscopy techniques
  • Advanced x-ray diffraction imaging technology.
  • Copper halide materials and device development.

External Collaborators

Type Name Company Role
External Prof. Brian Tanner Durham University Academic
External Dr Andreas Danilewsky Freiburg Univesity Academic

Modules Coordinated

Term Title Subject
2022 Solid State Electr. & Semiconductor Devices EE463
2022 Nanoelectronics Technology EE559