Integrated ALD-XPS Cluster


Combined atomic layer deposition (ALD)/X-ray photoelectron spectroscopy (XPS) facility

The combined atomic layer deposition (ALD) and X-ray photoelectron spectroscopy (XPS) facility enables the development of advanced materials with unique properties through controlling advanced plasma manufacturing processes at the atomic scale. This technique allows for precise control over the deposition of thin films, making it possible to engineer materials with tailored chemical and physical characteristics. The integration of XPS enables in-situ characterisation of the surface chemistry and composition of the materials, providing insights into the fundamental mechanisms of film growth and enabling optimisation of the deposition process. This technology has numerous applications, ranging from the development of high-performance electronic devices and sensors, to the creation of advanced coatings for environmental and biomedical applications. The ALD/XPS is located at the Nano Research Facility (

 The Oxford Instruments & Scienta Omicron ALD/XPS system facilitates:

  • Rapid sample transfer time between Atomic Layer Deposition (ALD) processing module and the X-Ray Photoelectron Spectroscopy (XPS) system. This all occurs under ultra-low vacuum which eliminates atmospheric effects such as oxidation.

  • In-situ surface plasma treatments of surfaces

  • Optimization of Atomic Layer Deposition (ALD) processes including investigations of infiltration of ALD precursors into polymer materials

  • Plasma assisted oxidation/reduction studies of infiltrated polymer materials

  • Monochromated XPS based chemical characterisation of individual processing steps.

  • XPS 2-D mapping of surface chemical composition at a spatial resolution of 10µm

On Request